公开(公告)号：US20160141457A1

公开(公告)日：2016-05-19

申请号：US14939817

申请日：2015-11-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-hoon HA ,  Sang-yeob SONG ,  Gi-bum KIM ,  Jae-in SIM ,  Seung-woo CHOI

IPC: H01L33/38 ,  H01L33/14 ,  H01L33/42 ,  H01L33/32 ,  H01L33/20

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/405 ,  H01L33/42 ,  H01L2933/0016

Abstract: A light-emitting device includes: a substrate; a light-emitting structure including first and second nitride-based semiconductor layers on the substrate and an active layer between the first and second nitride-based semiconductor layers; an insulating layer on a top surface of the light-emitting structure; a protrusion on the insulating layer, a top surface of the protrusion being larger than a bottom surface thereof, the protrusion having a trapezoidal cross-section; a transparent conductive layer covering a top surface of the light-emitting structure, a top surface of the insulating layer, and the top surface of the protrusion and having a constant thickness along the top surface of the light-emitting structure, the top surface of the insulating layer, and the top surface of the protrusion; and an electrode covering at least one of inclined surfaces of the protrusion on the transparent conductive layer.

Abstract translation: 发光装置包括：基板; 在所述基板上包括第一和第二氮化物基半导体层的发光结构以及所述第一和第二氮化物基半导体层之间的有源层; 在所述发光结构的顶表面上的绝缘层; 绝缘层上的突起，突起的顶表面大于其底表面，所述突起具有梯形横截面; 覆盖发光结构的顶面的透明导电层，绝缘层的上表面和突起的顶面，沿着发光结构的顶面具有恒定的厚度，顶表面 绝缘层和突起的顶表面; 以及覆盖透明导电层上的突起的至少一个倾斜表面的电极。

公开(公告)号：US20190027649A1

公开(公告)日：2019-01-24

申请号：US15876435

申请日：2018-01-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju-heon YOON ,  Jae-in SIM ,  Gi-bum KIM ,  Ha-yeong SON ,  Young-sub SHIN

IPC: H01L33/24 ,  H01L33/00 ,  H01L33/08 ,  H01L33/40 ,  H01L33/60 ,  H01L21/02 ,  H01L25/075

CPC classification number: H01L33/24 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02639 ,  H01L25/0753 ,  H01L33/007 ,  H01L33/08 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/60 ,  H01L51/5218 ,  H01L51/5234

Abstract: A semiconductor light-emitting device includes a light-emitting structure, a reflective electrode layer, and a transparent cover layer. The light-emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer. The reflective electrode layer covers an upper surface of the second semiconductor layer. The transparent cover layer covers an upper surface of the second semiconductor layer on the reflective electrode layer. The transparent cover layer includes a tail portion including a first portion and a second portion. The first portion covers an edge of the reflective electrode layer and a convex upper surface. The second portion is thinner than and extends from the first portion.