SEMICONDUCTOR LIGHT-EMITTING DEVICE
    1.
    发明申请

    公开(公告)号:US20180175247A1

    公开(公告)日:2018-06-21

    申请号:US15609653

    申请日:2017-05-31

    Abstract: A semiconductor light-emitting device includes a light-emitting structure comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a reflective electrode layer covering a top surface of the second semiconductor layer; an insulating structure covering a region of the top surface of the second semiconductor layer, the region being around the reflective electrode layer; a first interconnection conductive layer contacting a contact region of the first semiconductor layer through the insulating structure and, together with the insulating structure, constituting an omni-directional reflector (ODR) structure; and a second interconnection conductive layer contacting the reflective electrode layer through the insulating structure.

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    4.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号:US20140252390A1

    公开(公告)日:2014-09-11

    申请号:US14154312

    申请日:2014-01-14

    CPC classification number: H01L33/60 H01L33/405 H01L33/46 H01L2224/13

    Abstract: A semiconductor light-emitting device includes a semiconductor region having a light-emitting structure, an electrode layer formed on the semiconductor region, and a reflective protection structure extending exposing the upper surface of the electrode layer and covering the semiconductor region adjacent to the electrode layer.

    Abstract translation: 半导体发光器件包括具有发光结构的半导体区域,形成在半导体区域上的电极层,以及反射保护结构,其延伸暴露电极层的上表面并覆盖与电极层相邻的半导体区域 。

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