- 专利标题: METHOD OF PREPARING GRAPHENE QUANTUM DOT, HARDMASK COMPOSITION INCLUDING THE GRAPHENE QUANTUM DOT OBTAINED BY THE METHOD, METHOD OF FORMING PATTERN USING THE HARDMASK COMPOSITION, AND HARDMASK FORMED FROM THE HARDMASK COMPOSITION
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申请号: US15925034申请日: 2018-03-19
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公开(公告)号: US20190031906A1公开(公告)日: 2019-01-31
- 发明人: Sangwon KIM , Minsu SEOL , Hyeonjin SHIN , Dongwook LEE , Yunseong LEE , Seongjun JEONG , Alum JUNG
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon- si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon- si
- 优先权: KR10-2017-0096383 20170728
- 主分类号: C09D165/00
- IPC分类号: C09D165/00 ; C01B32/184 ; G03F7/16 ; G03F7/20 ; G03F7/38 ; G03F7/32 ; H01L21/311 ; H01L21/027
摘要:
Provided are a method of preparing a graphene quantum dot, a graphene quantum dot prepared using the method, a hardmask composition including the graphene quantum dot, a method of forming a pattern using the hardmask composition, and a hardmask obtained from the hardmask composition. The method of preparing a graphene quantum dot includes reacting a graphene quantum dot composition and an including a polyaromatic hydrocarbon compound and an organic solvent at an atmospheric pressure and a temperature of about 250° C. The polyaromatic hydrocarbon compound may include at least four aromatic rings.
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