公开(公告)号：US20230017244A1

公开(公告)日：2023-01-19

申请号：US17552756

申请日：2021-12-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook SHIN ,  Hyeonjin SHIN ,  Alum JUNG ,  Changseok LEE

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/285 ,  C01B32/186 ,  C23C16/26 ,  C23C16/505 ,  C23C16/511 ,  C23C16/02

Abstract: A method of forming nanocrystalline graphene according to an embodiment may include: arranging a substrate having a pattern in a reaction chamber; injecting a reaction gas into the reaction chamber, where the reaction gas includes a carbon source gas, an inert gas, and a hydrogen gas that are mixed; generating a plasma of the reaction gas in the reaction chamber; and directly growing the nanocrystalline graphene on a surface of the pattern using the plasma of the reaction gas at a process temperature. The pattern may include a first material and the substrate may include a second material different from the first material.

公开(公告)号：US20190031906A1

公开(公告)日：2019-01-31

申请号：US15925034

申请日：2018-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwon KIM ,  Minsu SEOL ,  Hyeonjin SHIN ,  Dongwook LEE ,  Yunseong LEE ,  Seongjun JEONG ,  Alum JUNG

IPC: C09D165/00 ,  C01B32/184 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  H01L21/311 ,  H01L21/027

CPC classification number: C09D165/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/182 ,  C01B32/184 ,  C08G61/02 ,  C08G2261/3424 ,  G03F7/094 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2004 ,  G03F7/322 ,  G03F7/38 ,  H01L21/0274 ,  H01L21/31138 ,  H01L21/31144 ,  Y10S977/734 ,  Y10S977/774 ,  Y10S977/842

Abstract: Provided are a method of preparing a graphene quantum dot, a graphene quantum dot prepared using the method, a hardmask composition including the graphene quantum dot, a method of forming a pattern using the hardmask composition, and a hardmask obtained from the hardmask composition. The method of preparing a graphene quantum dot includes reacting a graphene quantum dot composition and an including a polyaromatic hydrocarbon compound and an organic solvent at an atmospheric pressure and a temperature of about 250° C. The polyaromatic hydrocarbon compound may include at least four aromatic rings.

公开(公告)号：US20230238329A1

公开(公告)日：2023-07-27

申请号：US18158233

申请日：2023-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook SHIN ,  Sangwon KIM ,  Kyung-Eun BYUN ,  Joungeun YOO ,  Eunkyu LEE ,  Changseok LEE ,  Alum JUNG

IPC: H01L23/532 ,  H01L23/528

CPC classification number: H01L23/53276 ,  H01L23/528 ,  H01L23/53257 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/53242

Abstract: An interconnect structure may include a dielectric layer including a trench, a conductive wiring including graphene filling an inside of the trench, and a liner layer in contact with at least one surface of the conductive wiring and including a metal.

公开(公告)号：US20200039827A1

公开(公告)日：2020-02-06

申请号：US16233513

申请日：2018-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Alum JUNG ,  Keunwook Shin ,  Kyung-Eun Byun ,  Hyeonjin Shin ,  Hyunseok Lim ,  Seunggeol Nam ,  Hyunjae Song ,  Yeonchoo Cho

IPC: C01B32/186 ,  C23C16/26 ,  C23C16/505 ,  C23C16/511 ,  H01L21/02 ,  H01L29/16 ,  H01L29/06 ,  H01L29/04

Abstract: A method of forming nanocrystalline graphene by a plasma-enhanced chemical vapor deposition process is provided. The method of forming nanocrystalline graphene includes arranging a protective layer on a substrate and growing nanocrystalline graphene directly on the protective layer by using a plasma of a reaction gas. The reaction gas may include a mixed gas of a carbon source gas, an inert gas, and hydrogen gas.

公开(公告)号：US20190019675A1

公开(公告)日：2019-01-17

申请号：US15874226

申请日：2018-01-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongwook LEE ,  Sangwon KIM ,  Minsu SEOL ,  Seongjun PARK ,  Hyeonjin SHIN ,  Yunseong LEE ,  Seongjun JEONG ,  Alum JUNG

IPC: H01L21/033 ,  H01L21/311 ,  C01B32/194

Abstract: Provided are a hardmask composition, a method of preparing the same, and a method of forming a patterned layer using the hardmask composition. The hardmask composition may include graphene quantum dots, a metal compound, and a solvent. The metal compound may be chemically bonded (e.g., covalently bonded) to the graphene quantum dots. The metal compound may include a metal oxide. The metal oxide may include at least one of zirconium (Zr) oxide, titanium (Ti) oxide, tungsten (W) oxide, or aluminum (Al) oxide. The graphene quantum dots may be bonded to the metal compound by an M-O—C bond or an M-C bond, where M is a metal element, O is oxygen, and C is carbon.

公开(公告)号：US20230130702A1

公开(公告)日：2023-04-27

申请号：US17959812

申请日：2022-10-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook SHIN ,  Sungtae KIM ,  Alum JUNG

IPC: H01L23/532

Abstract: Provided are an interconnect structure and an electronic device including the same. The interconnect structure may include a first dielectric layer including a trench, a conductive wire filling an inside of trench, and a cap layer on a top surface of the conductive wire. The cap layer may include graphene doped with a group V element. A second dielectric layer may be on a top surface of the first cap layer.

公开(公告)号：US20230096121A1

公开(公告)日：2023-03-30

申请号：US17882169

申请日：2022-08-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Alum JUNG ,  Kyung-Eun BYUN ,  Keunwook SHIN

IPC: H01L29/06 ,  H01L21/02

Abstract: A stacked structure may include a first material layer, a two-dimensional material layer on the first material layer, and a second material layer on the two-dimensional material layer. The two-dimensional material layer may include a plurality of holes that each expose a portion of the first material layer. The second material layer may be coupled to the first material layer through the plurality of holes.

公开(公告)号：US20230081646A1

公开(公告)日：2023-03-16

申请号：US17902111

申请日：2022-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhyun KIM ,  Unki KIM ,  Alum JUNG ,  Kyung-Eun BYUN

IPC: H01L29/08 ,  H01L29/06 ,  H01L29/161 ,  H01L29/423 ,  H01L29/775 ,  H01L21/02 ,  H01L21/306 ,  H01L29/66

Abstract: A multi bridge channel field effect transistor includes a substrate, a first source/drain pattern on the substrate, a second source/drain pattern apart from the first source/drain pattern in a first direction on the substrate, a first channel layer and a second channel layer between the first source/drain pattern and the second source/drain pattern, a first graphene barrier between the first channel layer and the first source/drain pattern, a gate insulating layer surrounding the first channel layer, and a gate electrode surrounding the first channel layer with the gate insulating layer therebetween.

公开(公告)号：US20190016906A1

公开(公告)日：2019-01-17

申请号：US15944920

申请日：2018-04-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsu SEOL ,  Sangwon KIM ,  Hyeonjin SHIN ,  Dongwook LEE ,  Seongjun PARK ,  Yunseong LEE ,  Seongjun JEONG ,  Alum JUNG

IPC: C09D7/63 ,  C07F3/02 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  H01L21/311 ,  H01L21/3213

Abstract: Provided are a hardmask composition including a structure represented by Formula 1 and a solvent, a method of forming a pattern using the hardmask composition, and a hardmask formed from the hardmask composition. wherein in Formula 1, R1 to R8, X, and M are described in detail in the detailed description.

公开(公告)号：US20230207312A1

公开(公告)日：2023-06-29

申请号：US18179565

申请日：2023-03-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunkyu LEE ,  Kyung-Eun BYUN ,  Hyunjae SONG ,  Hyeonjin SHIN ,  Changhyun KIM ,  Keunwook SHIN ,  Changseok LEE ,  Alum JUNG

IPC: H01L21/02 ,  H01L29/16 ,  H01L29/165

CPC classification number: H01L21/02447 ,  H01L29/1606 ,  H01L29/1608 ,  H01L29/165 ,  H01L21/02499 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02381

Abstract: Provided are a graphene structure and a method of forming the graphene structure. The graphene structure includes a substrate and graphene on a surface of the substrate. Here, a bonding region in which a material of the substrate and carbon of the graphene are covalently bonded is formed between the surface of the substrate and the graphene.