发明申请
- 专利标题： DEEP TRENCH PROTECTION
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申请号： US15904013申请日： 2018-02-23
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公开(公告)号： US20190035736A1公开(公告)日： 2019-01-31
- 发明人: Fu-Chiang KUO , Tao-Cheng Liu , Shih-Chi Kuo , Tsung-Hsien Lee
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 主分类号： H01L23/538
- IPC分类号： H01L23/538 ; H01L23/532 ; H01L21/762 ; H01L21/768
摘要：
A semiconductor device includes: at least one conductive feature disposed on a substrate; at least one dielectric layer overlying the substrate, a trench structure extending through the at least one dielectric layer; and a protection layer overlaying the trench structure.
公开/授权文献
- US10804206B2 Deep trench protection 公开/授权日：2020-10-13
信息查询
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