公开(公告)号：US10508020B2

公开(公告)日：2019-12-17

申请号：US15411957

申请日：2017-01-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD

Inventor： Tsai-Hao Hung ,  Shih-Chi Kuo ,  Tsung-Hsien Lee ,  Tao-Cheng Liu

IPC: B81B1/00 ,  B81C1/00

Abstract: The present disclosure provides a substrate structure for a micro electro mechanical system (MEMS) device. The substrate structure includes a cap and a micro electro mechanical system (MEMS) substrate. The cap has a cavity, and the MEMS substrate is disposed on the cap. The MEMS substrate has a plurality of through holes exposing the cavity, and an aspect ratio of the through hole is greater than 30.

公开(公告)号：US11585982B2

公开(公告)日：2023-02-21

申请号：US17182151

申请日：2021-02-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tao-Cheng Liu ,  Tsai-Hao Hung ,  Shih-Chi Kuo

IPC: G02B6/136 ,  G02B6/122 ,  H01L21/308 ,  H01L21/306 ,  G02B5/18

Abstract: A method includes: forming a first plurality of tiers that each comprises first and second dummy layers over a substrate, wherein within each tier, the second dummy layer is disposed above the first dummy layer; forming a second plurality of recessed regions in the first plurality of tiers, wherein at least one subgroup of the second plurality of recessed regions extend through respective different numbers of the second dummy layers; and performing an etching operation to concurrently forming a third plurality of trenches with respective different depths in the substrate through the at least one subgroup of the second plurality of recessed regions.

公开(公告)号：US11227958B2

公开(公告)日：2022-01-18

申请号：US16863989

申请日：2020-04-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tao-Cheng Liu ,  Tsai-Hao Hung ,  Ying-Hsun Chen

IPC: H01L31/18 ,  H01L31/0232 ,  H01L31/0352 ,  H01L31/054 ,  H01L31/02 ,  H01L31/04

Abstract: An integrated circuit includes a photodetector. The photodetector includes a circular optical grating formed in an annular trench in a semiconductor substrate. The circular optical grating includes dielectric fins and photosensitive fins positioned in the annular trench. The circular optical grating is configured to receive incident light and to direct the incident light around the annular trench through the dielectric fins and the photosensitive fins until the light is absorbed by one of the photosensitive fins.

公开(公告)号：US12013570B2

公开(公告)日：2024-06-18

申请号：US18094839

申请日：2023-01-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tao-Cheng Liu ,  Tsai-Hao Hung ,  Shih-Chi Kuo

IPC: G02B6/136 ,  G02B5/18 ,  G02B6/122 ,  H01L21/306 ,  H01L21/308

CPC classification number: G02B6/136 ,  G02B5/1819 ,  G02B5/1857 ,  G02B6/1225 ,  H01L21/30608 ,  H01L21/3086

Abstract: A method includes: forming a first plurality of tiers that each comprises first and second dummy layers over a substrate, wherein within each tier, the second dummy layer is disposed above the first dummy layer; forming a second plurality of recessed regions in the first plurality of tiers, wherein at least one subgroup of the second plurality of recessed regions extend through respective different numbers of the second dummy layers; and performing an etching operation to concurrently forming a third plurality of trenches with respective different depths in the substrate through the at least one subgroup of the second plurality of recessed regions.

公开(公告)号：US11373952B2

公开(公告)日：2022-06-28

申请号：US17065979

申请日：2020-10-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Fu-Chiang Kuo ,  Tao-Cheng Liu ,  Shih-Chi Kuo ,  Tsung-Hsien Lee

IPC: H01L23/538 ,  H01L21/768 ,  H01L21/762 ,  H01L23/532 ,  H01L21/78

Abstract: A semiconductor device includes: at least one conductive feature disposed on a substrate; at least one dielectric layer overlying the substrate, a trench structure extending through the at least one dielectric layer; and a protection layer overlaying the trench structure.

公开(公告)号：US10804206B2

公开(公告)日：2020-10-13

申请号：US15904013

申请日：2018-02-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Fu-Chiang Kuo ,  Tao-Cheng Liu ,  Shih-Chi Kuo ,  Tsung-Hsien Lee

IPC: H01L21/784 ,  H01L23/538 ,  H01L21/768 ,  H01L21/762 ,  H01L23/532 ,  H01L21/78

Abstract: A semiconductor device includes: at least one conductive feature disposed on a substrate; at least one dielectric layer overlying the substrate, a trench structure extending through the at least one dielectric layer; and a protection layer overlaying the trench structure.

公开(公告)号：US10274678B1

公开(公告)日：2019-04-30

申请号：US15936042

申请日：2018-03-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tao-Cheng Liu ,  Tsai-Hao Hung ,  Shih-Chi Kuo

IPC: G02B6/136 ,  G02B6/122 ,  H01L21/308 ,  H01L21/306

Abstract: A method includes: forming a first plurality of tiers that each comprises first and second dummy layers over a substrate, wherein within each tier, the second dummy layer is disposed above the first dummy layer; forming a second plurality of recessed regions in the first plurality of tiers, wherein at least one subgroup of the second plurality of recessed regions extend through respective different numbers of the second dummy layers; and performing an etching operation to concurrently forming a third plurality of trenches with respective different depths in the substrate through the at least one subgroup of the second plurality of recessed regions.

公开(公告)号：US11688754B2

公开(公告)日：2023-06-27

申请号：US16867873

申请日：2020-05-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsai-Hao Hung ,  Tao-Cheng Liu ,  Ying-Hsun Chen

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14685

Abstract: Photonic devices and methods having an increased quantum effect length are provided. In some embodiments, a photonic device includes a substrate having a first surface. A cavity extends into the substrate from the first surface to a second surface. A semiconductor layer is disposed on the second surface in the cavity of the substrate, and a cover layer is disposed on the semiconductor layer. The semiconductor layer is configured to receive incident radiation through the substrate and to totally internally reflect the radiation at an interface between the semiconductor layer and the cover layer.

公开(公告)号：US10928590B2

公开(公告)日：2021-02-23

申请号：US16856581

申请日：2020-04-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tao-Cheng Liu ,  Tsai-Hao Hung ,  Shih-Chi Kuo

IPC: G02B6/136 ,  G02B6/122 ,  H01L21/308 ,  H01L21/306 ,  G02B5/18

Abstract: A method includes: forming a first plurality of tiers that each comprises first and second dummy layers over a substrate, wherein within each tier, the second dummy layer is disposed above the first dummy layer; forming a second plurality of recessed regions in the first plurality of tiers, wherein at least one subgroup of the second plurality of recessed regions extend through respective different numbers of the second dummy layers; and performing an etching operation to concurrently forming a third plurality of trenches with respective different depths in the substrate through the at least one subgroup of the second plurality of recessed regions.

公开(公告)号：US20190035736A1

公开(公告)日：2019-01-31

申请号：US15904013

申请日：2018-02-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Fu-Chiang KUO ,  Tao-Cheng Liu ,  Shih-Chi Kuo ,  Tsung-Hsien Lee

IPC: H01L23/538 ,  H01L23/532 ,  H01L21/762 ,  H01L21/768

Abstract: A semiconductor device includes: at least one conductive feature disposed on a substrate; at least one dielectric layer overlying the substrate, a trench structure extending through the at least one dielectric layer; and a protection layer overlaying the trench structure.