发明申请
- 专利标题: BONDING METHOD
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申请号: US16135577申请日: 2018-09-19
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公开(公告)号: US20190036008A1公开(公告)日: 2019-01-31
- 发明人: Tomoyoshi TAI , Yuji HORI , Keiichiro ASAI , Takashi YOSHINO , Masashi GOTO , Masahiko NAMERIKAWA
- 申请人: NGK INSULATORS, LTD.
- 优先权: JP2016-061713 20160325
- 主分类号: H01L41/313
- IPC分类号: H01L41/313 ; H01L41/187 ; H01L41/09 ; H01L41/337 ; H03H3/08 ; H03H9/25 ; H03H9/02
摘要:
It is formed, over a supporting body made of a ceramic, a bonding layer composed of one or more material selected from the group consisting of mullite, alumina, tantalum pentoxide, titanium oxide and niobium pentoxide. Neutralized beam is irradiated onto a surface of the bonding layer to activate the surface of the bonding layer. The surface of the bonding layer and the piezoelectric single crystal substrate are bonded by direct bonding.
公开/授权文献
- US10720566B2 Bonding method 公开/授权日:2020-07-21
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