公开(公告)号：US20200067480A1

公开(公告)日：2020-02-27

申请号：US16670462

申请日：2019-10-31

申请人： NGK INSULATORS, LTD.

发明人： Tomoyoshi TAI ,  Masahiko NAMERIKAWA ,  Takashi YOSHINO

IPC分类号： H03H9/02 ,  H03H3/10 ,  H01L41/313 ,  H03H9/05 ,  H03H9/25

摘要： In an acoustic wave device including a piezoelectric material substrate and supporting body bonded with each other through a bonding layer, it is an object to provide the acoustic wave device having the structure for further improving the propagation loss and temperature characteristics of frequency of an acoustic wave. An acoustic wave device includes a piezoelectric material substrate, an electrode on the piezoelectric material substrate, a supporting body, and a bonding layer for bonding the piezoelectric material substrate and the supporting body. The bonding layer is composed of quartz crystal.

公开(公告)号：US20240125986A1

公开(公告)日：2024-04-18

申请号：US18536342

申请日：2023-12-12

申请人： NGK INSULATORS, LTD.

发明人： Kentaro TANI ,  Jungo KONDO ,  Masahiko NAMERIKAWA ,  Yoshio KIKUCHI

IPC分类号： G02B5/18 ,  G01N21/3581

CPC分类号： G02B5/1861 ,  G01N21/3581

摘要： A member for terahertz equipment includes: a substrate main body having a first principal surface and a second principal surface; and a reflection suppressing portion provided on at least one of the first principal surface or the second principal surface of the substrate main body. The reflection suppressing portion includes a plurality of protrusions which are arranged in a grating shape, and each have a tapered portion in a vertical cross section.

公开(公告)号：US20240251682A1

公开(公告)日：2024-07-25

申请号：US18586617

申请日：2024-02-26

申请人： NGK INSULATORS, LTD.

发明人： Yudai UNO ,  Tomoyoshi TAI ,  Masahiko NAMERIKAWA

IPC分类号： H10N30/00 ,  H10N30/072 ,  H10N30/097 ,  H10N30/853 ,  H10N30/87

CPC分类号： H10N30/10513 ,  H10N30/072 ,  H10N30/097 ,  H10N30/8554 ,  H10N30/87

摘要： A composite substrate includes: a support substrate; a piezoelectric film arranged above the support substrate; and a joining layer arranged between the support substrate and the piezoelectric film, wherein the piezoelectric film includes a polycrystalline substance having a degree of c-axis orientation determined by a Lotgering method of 80% or less, and wherein the joining layer includes an amorphous substance.

公开(公告)号：US20190036009A1

公开(公告)日：2019-01-31

申请号：US16135689

申请日：2018-09-19

申请人： NGK INSULATORS, LTD.

发明人： Tomoyoshi TAI ,  Yuji HORI ,  Keiichiro ASAI ,  Takashi YOSHINO ,  Masashi GOTO ,  Masahiko NAMERIKAWA

IPC分类号： H01L41/313 ,  H03H9/145 ,  H03H9/02 ,  H03H9/25 ,  H03H3/08 ,  H03H9/05 ,  H03H9/17 ,  H01L41/187 ,  H01L41/337 ,  H01L41/39

摘要： A bonding layer 3 is formed over a piezoelectric material substrate, and the bonding layer 3 is made of or more material selected from the group consisting of silicon nitride, aluminum nitride, alumina, tantalum pentoxide, mullite, niobium pentoxide and titanium oxide. Neutralized beam A is irradiated onto a surface 4 of the bonding layer and a surface of a supporting body to activate the surface of the bonding layer and the surface of the supporting body. The surface of the bonding layer and the surface of the supporting body are bonded by direct bonding.

公开(公告)号：US20190288660A1

公开(公告)日：2019-09-19

申请号：US16422322

申请日：2019-05-24

申请人： NGK Insulators, Ltd.

发明人： Masashi GOTO ,  Tomoyoshi TAI ,  Takahiro YAMADERA ,  Yuji HORI ,  Keiichiro ASAI ,  Masahiko NAMERIKAWA ,  Takashi YOSHINO

IPC分类号： H03H9/02 ,  C30B29/30 ,  H03H3/08 ,  H03H9/25 ,  H03H9/05 ,  H01L41/312 ,  H01L41/18

摘要： A piezoelectric monocrystalline substrate is composed of a material represented by LiAO3 (A represents at least one element selected from the group consisting of niobium and tantalum), a bonding layer is compose of a material of an oxide of at least one element selected from the group consisting of niobium and tantalum, and an interface layer is provided along an interface between the piezoelectric monocrystalline substrate 6 and bonding layer, and the interface layer has a composition of ExO(1-x) (E represents at least one element selected from the group consisting of niobium and tantalum and 0.29≤x≤0.89).

公开(公告)号：US20190036008A1

公开(公告)日：2019-01-31

申请号：US16135577

申请日：2018-09-19

申请人： NGK INSULATORS, LTD.

发明人： Tomoyoshi TAI ,  Yuji HORI ,  Keiichiro ASAI ,  Takashi YOSHINO ,  Masashi GOTO ,  Masahiko NAMERIKAWA

IPC分类号： H01L41/313 ,  H01L41/187 ,  H01L41/09 ,  H01L41/337 ,  H03H3/08 ,  H03H9/25 ,  H03H9/02

摘要： It is formed, over a supporting body made of a ceramic, a bonding layer composed of one or more material selected from the group consisting of mullite, alumina, tantalum pentoxide, titanium oxide and niobium pentoxide. Neutralized beam is irradiated onto a surface of the bonding layer to activate the surface of the bonding layer. The surface of the bonding layer and the piezoelectric single crystal substrate are bonded by direct bonding.

公开(公告)号：US20220329230A1

公开(公告)日：2022-10-13

申请号：US17851230

申请日：2022-06-28

申请人： NGK INSULATORS, LTD.

发明人： Tomoyoshi TAI ,  Yudai UNO ,  Keiichiro ASAI ,  Ryosuke HATTORI ,  Masato NIWA ,  Masahiko NAMERIKAWA

IPC分类号： H03H9/17 ,  H01L41/047

摘要： A piezoelectric vibrating device includes a piezoelectric layer composed of a bulk piezoelectric material, a lower electrode on a first surface of the piezoelectric layer and a supporting substrate bonded with the lower electrode.