Disclosed are a transistor device and a method. The transistor device includes a semiconductor body with a first surface, an inner region, and an edge region, a drift region of a first doping type in the inner region and the edge region, a plurality of transistor cells in the inner region, and a termination structure in the edge region. The termination structure includes a recess extending from the first surface in the edge region into the semiconductor body, and a floating compensation region with dopant atoms of a second doping type complementary to the first doping type in the drift region adjacent the recess.