Invention Application
- Patent Title: Methods For Writing To An Array Of Resistive Random Access Memory Cells
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Application No.: US16119416Application Date: 2018-08-31
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Publication No.: US20190080754A1Publication Date: 2019-03-14
- Inventor: Hieu Van Tran , Anh Ly , Thuan Vu , Stanley Hong , Feng Zhou , Xian Liu , Nhan Do
- Applicant: Silicon Storage Technology, Inc.
- Main IPC: G11C13/00
- IPC: G11C13/00 ; H01L27/24 ; H01L45/00

Abstract:
Numerous embodiments of methods for writing to a resistive random access memory (RRAM) cell are disclosed. In one embodiment, the system verifies if a current through the RRAM cell exceeds a threshold value, and if it does not, the system executes a concurrent write-while-verify operation. In another embodiment, the system verifies if current through the RRAM cell has reached a target value, and if it has not, the system executes a write operation and then verifies the write operation using a current comparison.
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