- 专利标题: Opening in the Pad for Bonding Integrated Passive Device in InFO Package
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申请号: US16203919申请日: 2018-11-29
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公开(公告)号: US20190098756A1公开(公告)日: 2019-03-28
- 发明人: Cheng-Hsien Hsieh , Chi-Hsi Wu , Chen-Hua Yu , Der-Chyang Yeh , Hsien-Wei Chen , Li-Han Hsu , Wei-Cheng Wu
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号: H05K1/11
- IPC分类号: H05K1/11 ; H05K1/18 ; H01L23/00 ; H05K1/02
摘要:
A package includes a conductive pad, with a plurality of openings penetrating through the conductive pad. A dielectric layer encircles the conductive pad. The dielectric layer has portions filling the plurality of openings. An Under-Bump Metallurgy (UBM) includes a via portion extending into the dielectric layer to contact the conductive pad. A solder region is overlying and contacting the UBM. An integrated passive device is bonded to the UBM through the solder region.
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