Invention Application
- Patent Title: FILM FORMING METHOD AND PLASMA CHEMICAL VAPOR DEPOSITION APPARATUS
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Application No.: US16265330Application Date: 2019-02-01
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Publication No.: US20190161857A1Publication Date: 2019-05-30
- Inventor: Kazutaka TACHIBANA , Takayasu SATO , Yoji SATO , Hiromichi NAKATA , Kazuyoshi MANABE , Seiji OKAMURA , Izuru YAMAMOTO
- Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
- Applicant Address: JP Toyota-shi
- Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee Address: JP Toyota-shi
- Priority: JP2016-038873 20160301
- Main IPC: C23C16/26
- IPC: C23C16/26 ; H05H1/46 ; C23C16/52 ; C23C16/511

Abstract:
A PCVD apparatus includes a waveguide member which supports the workpiece with a portion of the waveguide member positioned in a reactor and causes microwaves output from a high-frequency output device to propagate to the workpiece. In a process of gradually increasing an intensity of the microwaves propagating to the workpiece through the waveguide member from “0”, the intensity of the microwaves output from the high-frequency output device when step-up of a bias current of the workpiece occurs is referred to as a first intensity, and in a process of gradually increasing the intensity of the microwaves from the first intensity, the intensity of the microwaves when step-up of the bias current occurs again is referred to as a second intensity. During film formation, the microwaves having an intensity of higher than the first intensity and lower than the second intensity are output from the high-frequency output device.
Information query
IPC分类: