公开(公告)号：US20190161857A1

公开(公告)日：2019-05-30

申请号：US16265330

申请日：2019-02-01

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA

Inventor： Kazutaka TACHIBANA ,  Takayasu SATO ,  Yoji SATO ,  Hiromichi NAKATA ,  Kazuyoshi MANABE ,  Seiji OKAMURA ,  Izuru YAMAMOTO

IPC: C23C16/26 ,  H05H1/46 ,  C23C16/52 ,  C23C16/511

Abstract: A PCVD apparatus includes a waveguide member which supports the workpiece with a portion of the waveguide member positioned in a reactor and causes microwaves output from a high-frequency output device to propagate to the workpiece. In a process of gradually increasing an intensity of the microwaves propagating to the workpiece through the waveguide member from “0”, the intensity of the microwaves output from the high-frequency output device when step-up of a bias current of the workpiece occurs is referred to as a first intensity, and in a process of gradually increasing the intensity of the microwaves from the first intensity, the intensity of the microwaves when step-up of the bias current occurs again is referred to as a second intensity. During film formation, the microwaves having an intensity of higher than the first intensity and lower than the second intensity are output from the high-frequency output device.

公开(公告)号：US20180030594A1

公开(公告)日：2018-02-01

申请号：US15647305

申请日：2017-07-12

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA

Inventor： Kazutaka TACHIBANA ,  Takayasu SATO ,  Yoji SATO ,  Hiromichi NAKATA ,  Daiki TSUBOI

IPC: C23C16/27 ,  H05H1/46 ,  H01L21/205 ,  C23C16/511 ,  C23C16/458

CPC classification number: C23C16/274 ,  C23C14/14 ,  C23C14/325 ,  C23C16/26 ,  C23C16/4581 ,  C23C16/511 ,  C23C28/32 ,  H01J37/32192 ,  H01J37/3222 ,  H01L21/205 ,  H05H1/46 ,  H05H2001/4607 ,  H05H2001/463

Abstract: A high-frequency wave supplying structure includes a center conductor that extends in a specified direction, an outer conductor that is coaxial with the center conductor and grounded, and a cylindrical insulating member that is provided between the center conductor and the outer conductor. The distal end of the center conductor is a support portion that supports a workpiece W. A shield member is provided outward of the outer conductor to be coaxial with the outer conductor and the center conductor. The distal end of the shield member is located closer to the support portion in the specified direction than the distal end of the outer conductor. The insulating member includes a protruding portion that protrudes toward the support portion from an opening of the outer conductor. The protruding portion is opposed to the distal end of the outer conductor in the specified direction.

公开(公告)号：US20160376707A1

公开(公告)日：2016-12-29

申请号：US15188154

申请日：2016-06-21

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA

Inventor： Yoji SATO ,  Takayasu SATO ,  Hiromichi NAKATA ,  Kazutaka TACHIBANA ,  Osamu ARIYADA ,  Yuji TAKANO ,  Ryo TSURUMOTO

IPC: C23C16/513 ,  C23C16/455

CPC classification number: C23C16/513 ,  C23C16/455 ,  H01J37/32211 ,  H01J37/32311 ,  H01J37/32577

Abstract: A plasma chemical vapor deposition device includes a chamber, a first conductor having an elongated shape, a second conductor having a tubular shape, a high-frequency output device, and a direct-current power supply. A first connecting portion of the first conductor with the high-frequency output device and a second connecting portion of the first conductor with the direct-current power supply are both placed outside the chamber. A distance from one end of the first conductor to the first connecting portion is shorter than a distance from the one end of the first conductor to the second connecting portion. An impedance change portion is provided between the first connecting portion and the second connecting portion in the first conductor, the impedance change portion having an impedance different from an impedance between the one end of the first conductor and the first connecting portion.

Abstract translation: 等离子体化学气相沉积装置包括腔室，具有细长形状的第一导体，具有管状形状的第二导体，高频输出装置和直流电源。 第一导体与高频输出装置的第一连接部分和具有直流电源的第一导体的第二连接部分都放置在腔室外部。 从第一导体的一端到第一连接部的距离比从第一导体的一端到第二连接部的距离短。 阻抗变化部分设置在第一导体中的第一连接部分和第二连接部分之间，阻抗变化部分具有与第一导体的一端和第一连接部分之间的阻抗不同的阻抗。

公开(公告)号：US20210072172A1

公开(公告)日：2021-03-11

申请号：US16884270

申请日：2020-05-27

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA

Inventor： Noritoshi NAKAGAWA ,  Kazutaka TACHIBANA ,  Takuya ITAKURA ,  Hitoshi TERASHI

IPC: G01N25/00 ,  H01M8/04664 ,  H01M8/0432 ,  H01M8/0202

Abstract: An inspection system of a member for a fuel cell separator including a titanium or titanium alloy base material and a coating layer including carbon includes a heater configured to heat the member for a fuel cell separator, a temperature detector configured to detect a temperature of the member for a fuel cell separator after heated by the heater, and a determination unit configured to determine a position of a high-temperature place at which a degree of a temperature increase is greater than a previously-set standard in the member for a fuel cell separator using the temperature detected by the temperature detector.

公开(公告)号：US20180044777A1

公开(公告)日：2018-02-15

申请号：US15653698

申请日：2017-07-19

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA

Inventor： Shota MATSUDA ,  Hiromichi NAKATA ,  Takayasu SATO ,  Yoji SATO ,  Kazutaka TACHIBANA ,  Daiki TSUBOI

IPC: C23C14/32 ,  C23C16/455 ,  C30B25/10 ,  C23C16/515

CPC classification number: C23C14/325 ,  C23C16/45523 ,  C23C16/515 ,  C30B23/066 ,  C30B25/105 ,  H01J37/32055 ,  H01J37/32403 ,  H01J37/32568 ,  H01J37/32614

Abstract: A film forming apparatus includes a cylindrical evaporation source, an electrode, and a gas passage. The evaporation source is composed of metal and includes an internal space for accommodating a workplace. The electrode is arranged in the internal space of the evaporation source, The gas passage supplies gas to the internal space of the evaporation source from a space outside the evaporation source. The gas passage includes an end portion located in the internal space. The end portion of the gas passage includes a first section composed of a first material and a second section composed of a second material. The first material and the second material have different thermal expansion coefficients.

公开(公告)号：US20170253961A1

公开(公告)日：2017-09-07

申请号：US15442121

申请日：2017-02-24

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA

Inventor： Kazutaka TACHIBANA ,  Takayasu SATO ,  Yoji SATO ,  Hiromichi NAKATA ,  Kazuyoshi MANABE ,  Seiji OKAMURA ,  Izuru YAMAMOTO

IPC: C23C16/26 ,  C23C16/52 ,  C23C16/511

CPC classification number: C23C16/26 ,  C23C16/511 ,  C23C16/52 ,  H05H1/46 ,  H05H2001/4622

Abstract: A PCVD apparatus includes a waveguide member which supports the workpiece with a portion of the waveguide member positioned in a reactor and causes microwaves output from a high-frequency output device to propagate to the workpiece. In a process of gradually increasing an intensity of the microwaves propagating to the workpiece through the waveguide member from “0”, the intensity of the microwaves output from the high-frequency output device when step-up of a bias current of the workpiece occurs is referred to as a first intensity, and in a process of gradually increasing the intensity of the microwaves from the first intensity, the intensity of the microwaves when step-up of the bias current occurs again is referred to as a second intensity. During film formation, the microwaves having an intensity of higher than the first intensity and lower than the second intensity are output from the high-frequency output device.

公开(公告)号：US20180010240A1

公开(公告)日：2018-01-11

申请号：US15636036

申请日：2017-06-28

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA

Inventor： Takayasu SATO ,  Yoji SATO ,  Kazutaka TACHIBANA

IPC: C23C14/32 ,  C23C14/54

CPC classification number: C23C14/325 ,  C23C14/54 ,  H01J37/32055

Abstract: An arc discharge generation device energizes an evaporation source with the power supply device so that the evaporation source functions as a negative electrode to have a striker chip contact the evaporation source and then separate the striker chip from the evaporation source to generate an arc discharge in the chamber. When extinguishing the arc discharge generated in the chamber, the arc discharge generation device has the striker chip contact the evaporation source and de-energizes the evaporation source with the power supply device in a situation in which the striker chip is in contact with the evaporation source.

公开(公告)号：US20170229292A1

公开(公告)日：2017-08-10

申请号：US15422112

申请日：2017-02-01

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA

Inventor： Yoji SATO ,  Takayasu SATO ,  Kazutaka TACHIBANA ,  Hiromichi NAKATA

IPC: H01J37/32

CPC classification number: H01J37/32853 ,  H01J37/32201 ,  H01J37/32477 ,  H01J37/32486 ,  H01J2237/3321

Abstract: A plasma chemical vapor deposition device includes an adhesion suppressing sheet suppressing a processing gas from adhering to an inner wall of a reactor. The adhesion suppressing sheet is arranged between a placement position of a workpiece and the inner wall of the reactor. The adhesion suppressing sheet is a fabric that includes first fiber bundles and second fiber bundles that extend in directions different from each other. In the first fiber bundles, front side portions and rear side portions are alternately arranged in a first direction. In the second fiber bundles, front side portions and rear side portions are alternately arranged in a second direction.