Disclosed is a processing device for the third generation semiconductor materials. The device includes a reaction device, an operating platform and a support device. A reaction chamber is located inside the reaction device and the upper and lower ends of the reaction device are covered with an upper cover and a lower cover, respectively. An etching solution injection port and an etching solution discharge port are provided at the side wall of the reaction chamber. A stirring excitation coil, a plurality of conducting rods, a plurality of heating rods, a plurality of sealing rings and a workpiece are provided inside of the reaction chamber. The stirring excitation coil is mounted just under the upper cover; the conducting rods and the heating rods are respectively mounted in a circumferentially symmetrical manner in an inner wall of the reaction chamber.