- 专利标题: HIGH PURITY METALLIC TOP COAT FOR SEMICONDUCTOR MANUFACTURING COMPONENTS
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申请号: US16293549申请日: 2019-03-05
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公开(公告)号: US20190194817A1公开(公告)日: 2019-06-27
- 发明人: Jennifer Y. Sun , Vahid Firouzdor
- 申请人: Applied Materials, Inc.
- 主分类号: C25D11/34
- IPC分类号: C25D11/34 ; C25D11/04 ; C25D11/18 ; C23C28/00 ; C23C24/04 ; C25D11/26 ; C25D11/16
摘要:
An article comprises a component for a manufacturing chamber, a coating on the component, and an anodization layer formed on the coating. The anodization layer has a thickness of about 2-10 mil, comprises a low porosity layer portion having a density of greater than 99% and a porous columnar layer portion having a higher porosity than the low porosity layer portion. The porous columnar layer portion comprises a plurality of columnar nanopores having a diameter of about 10-50 nm.
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