- 专利标题: ION SOURCE AND ION IMPLANTATION APPARATUS
-
申请号: US16381512申请日: 2019-04-11
-
公开(公告)号: US20190237290A1公开(公告)日: 2019-08-01
- 发明人: Takumi YUZE , Toshihiro TERASAWA , Naruyasu SASAKI
- 申请人: ULVAC, INC.
- 申请人地址: JP Chigasaki-shi
- 专利权人: ULVAC, INC.
- 当前专利权人: ULVAC, INC.
- 当前专利权人地址: JP Chigasaki-shi
- 优先权: JP2017-075838 20170406
- 主分类号: H01J37/08
- IPC分类号: H01J37/08 ; H01J37/317 ; H01J37/30
摘要:
An ion source having an ion generation container configured to generate ions by reacting ionized gas introduced into the container via a tubular gas introduction pipe with an ion source material emitted in the container. The gas introduction pipe is configured to introduce the ionized gas into an inner space of the gas introduction pipe via a gas supply pipe. In the inner space of the gas introduction pipe, a detachable cooling trap member is disposed and includes a cooling trap portion configured to cool and trap a byproduct produced in the ion generation container. The cooling trap portion is disposed near a supply-side leading end of the gas supply pipe in the inner space of the gas introduction pipe and is not contact with an interior wall face of the gas introduction pipe.
公开/授权文献
- US10529532B2 Ion source and ion implantation apparatus 公开/授权日:2020-01-07
信息查询