- 专利标题: INTEGRATED CIRCUITS (ICS) ON A GLASS SUBSTRATE
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申请号: US16402713申请日: 2019-05-03
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公开(公告)号: US20190259780A1公开(公告)日: 2019-08-22
- 发明人: Shiqun GU , Daniel Daeik KIM , Matthew Michael NOWAK , Jonghae KIM , Changhan Hobie YUN , Je-Hsiung Jeffrey LAN , David Francis BERDY
- 申请人: QUALCOMM Incorporated
- 专利权人: QUALCOMM Incorporated
- 当前专利权人: QUALCOMM Incorporated
- 主分类号: H01L27/12
- IPC分类号: H01L27/12 ; H01L23/498 ; H01L21/306 ; H01L23/66 ; H01L27/088 ; H01L21/304 ; H01L21/8234 ; H01L21/84 ; H01L29/10 ; H01L27/092 ; H01L21/762 ; H01L21/768 ; H01L23/528
摘要:
An integrated circuit (IC) includes a glass substrate and a buried oxide layer. The IC additionally includes a first semiconductor device coupled to the glass substrate. The first semiconductor device includes a first gate and a first portion of a semiconductive layer coupled to the buried oxide layer. The first gate is located between the glass substrate and the first portion of the semiconductive layer and between the glass substrate and the buried oxide layer. The IC additionally includes a second semiconductor device coupled to the glass substrate. The second semiconductor device includes a second gate and a second portion of the semiconductive layer. The second gate is located between the glass substrate and the second portion of the semiconductive layer. The first portion is discontinuous from the second portion.
公开/授权文献
- US10903240B2 Integrated circuits (ICs) on a glass substrate 公开/授权日:2021-01-26