Invention Application
- Patent Title: IGBT with dV/dt Controllability and Low Gate Charge
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Application No.: US16368638Application Date: 2019-03-28
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Publication No.: US20190305087A1Publication Date: 2019-10-03
- Inventor: Alexander Philippou , Roman Baburske , Christian Jaeger , Johannes Georg Laven , Helmut Maeckel
- Applicant: Infineon Technologies AG
- Priority: DE102018107568.5 20180329
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/06 ; H01L29/423 ; H01L29/739 ; H01L29/78 ; H01L29/66 ; H01L29/08
Abstract:
An IGBT having a barrier region is provided. A power unit cell of the IGBT has at least two trenches that may both extend into the barrier region. The at least two trenches may both have a respective trench electrode coupled to a control terminal of the IGBT. For example, the trench electrodes are structured to reduce the total gate charge of the IGBT. The barrier region may be p-doped and vertically confined, i.e., in and against the extension direction, by the drift region. The barrier region can be electrically floating.
Public/Granted literature
- US10978560B2 Power semiconductor device with dV/dt controllability and low gate charge Public/Granted day:2021-04-13
Information query
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