公开(公告)号：US20210210604A1

公开(公告)日：2021-07-08

申请号：US17208779

申请日：2021-03-22

Applicant: Infineon Technologies AG

Inventor： Alexander Philippou ,  Roman Baburske ,  Christian Jaeger ,  Johannes Georg Laven ,  Helmut Maeckel

IPC: H01L29/10 ,  H01L29/06 ,  H01L29/423 ,  H01L29/08 ,  H01L29/78 ,  H01L29/66 ,  H01L29/739

Abstract: An power semiconductor device having a barrier region is provided. A power unit cell of the power semiconductor device has at least two trenches that may both extend into the barrier region. The at least two trenches may both have a respective trench electrode coupled to a control terminal of the power semiconductor device. For example, the trench electrodes are structured to reduce the total gate charge of the power semiconductor device. The barrier region may be p-doped and vertically confined, i.e., in and against the extension direction, by the drift region. The barrier region can be electrically floating.

公开(公告)号：US12199146B2

公开(公告)日：2025-01-14

申请号：US18204635

申请日：2023-06-01

Applicant: Infineon Technologies AG

Inventor： Alexander Philippou ,  Roman Baburske ,  Christian Jaeger ,  Johannes Georg Laven ,  Helmut Maeckel

IPC: H01L29/10 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/739 ,  H01L29/78

Abstract: A power semiconductor device having a barrier region is provided. A power unit cell of the power semiconductor device has at least two trenches that may both extend into the barrier region. The at least two trenches may both have a respective trench electrode coupled to a control terminal of the power semiconductor device. For example, the trench electrodes are structured to reduce the total gate charge of the power semiconductor device. The barrier region may be p-doped and vertically confined, i.e., in and against the extension direction, by the drift region. The barrier region can be electrically floating.

公开(公告)号：US10978560B2

公开(公告)日：2021-04-13

申请号：US16368638

申请日：2019-03-28

Applicant: Infineon Technologies AG

Inventor： Alexander Philippou ,  Roman Baburske ,  Christian Jaeger ,  Johannes Georg Laven ,  Helmut Maeckel

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L29/739 ,  H01L29/10 ,  H01L29/423 ,  H01L29/08

Abstract: A power semiconductor device having a barrier region is provided. A power unit cell of the power semiconductor device has at least two trenches that may both extend into the barrier region. The at least two trenches may both have a respective trench electrode coupled to a control terminal of the power semiconductor device. For example, the trench electrodes are structured to reduce the total gate charge of the power semiconductor device. The barrier region may be p-doped and vertically confined, i.e., in and against the extension direction, by the drift region. The barrier region can be electrically floating.

公开(公告)号：US20190305087A1

公开(公告)日：2019-10-03

申请号：US16368638

申请日：2019-03-28

Applicant: Infineon Technologies AG

Inventor： Alexander Philippou ,  Roman Baburske ,  Christian Jaeger ,  Johannes Georg Laven ,  Helmut Maeckel

IPC: H01L29/10 ,  H01L29/06 ,  H01L29/423 ,  H01L29/739 ,  H01L29/78 ,  H01L29/66 ,  H01L29/08

Abstract: An IGBT having a barrier region is provided. A power unit cell of the IGBT has at least two trenches that may both extend into the barrier region. The at least two trenches may both have a respective trench electrode coupled to a control terminal of the IGBT. For example, the trench electrodes are structured to reduce the total gate charge of the IGBT. The barrier region may be p-doped and vertically confined, i.e., in and against the extension direction, by the drift region. The barrier region can be electrically floating.

公开(公告)号：US20250081563A1

公开(公告)日：2025-03-06

申请号：US18948865

申请日：2024-11-15

Applicant: Infineon Technologies AG

Inventor： Alexander Philippou ,  Roman Baburske ,  Christian Jaeger ,  Johannes Georg Laven ,  Helmut Maeckel

IPC: H01L29/10 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/739 ,  H01L29/78

Abstract: A power semiconductor device having a barrier region is provided. A power unit cell of the power semiconductor device has at least two trenches that may both extend into the barrier region. The at least two trenches may both have a respective trench electrode coupled to a control terminal of the power semiconductor device. For example, the trench electrodes are structured to reduce the total gate charge of the power semiconductor device. The barrier region may be p-doped and vertically confined, i.e., in and against the extension direction, by the drift region. The barrier region can be electrically floating.

公开(公告)号：US20230307499A1

公开(公告)日：2023-09-28

申请号：US18204635

申请日：2023-06-01

Applicant: Infineon Technologies AG

Inventor： Alexander Philippou ,  Roman Baburske ,  Christian Jaeger ,  Johannes Georg Laven ,  Helmut Maeckel

IPC: H01L29/10 ,  H01L29/06 ,  H01L29/423 ,  H01L29/08 ,  H01L29/78 ,  H01L29/66 ,  H01L29/739

CPC classification number: H01L29/1083 ,  H01L29/0696 ,  H01L29/4236 ,  H01L29/0869 ,  H01L29/7813 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7397

Abstract: A power semiconductor device having a barrier region is provided. A power unit cell of the power semiconductor device has at least two trenches that may both extend into the barrier region. The at least two trenches may both have a respective trench electrode coupled to a control terminal of the power semiconductor device. For example, the trench electrodes are structured to reduce the total gate charge of the power semiconductor device. The barrier region may be p-doped and vertically confined, i.e., in and against the extension direction, by the drift region. The barrier region can be electrically floating.

公开(公告)号：US11682700B2

公开(公告)日：2023-06-20

申请号：US17208779

申请日：2021-03-22

Applicant: Infineon Technologies AG

Inventor： Alexander Philippou ,  Roman Baburske ,  Christian Jaeger ,  Johannes Georg Laven ,  Helmut Maeckel

IPC: H01L29/10 ,  H01L29/06 ,  H01L29/423 ,  H01L29/08 ,  H01L29/78 ,  H01L29/66 ,  H01L29/739

CPC classification number: H01L29/1083 ,  H01L29/0696 ,  H01L29/0869 ,  H01L29/4236 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7813

Abstract: An power semiconductor device having a barrier region is provided. A power unit cell of the power semiconductor device has at least two trenches that may both extend into the barrier region. The at least two trenches may both have a respective trench electrode coupled to a control terminal of the power semiconductor device. For example, the trench electrodes are structured to reduce the total gate charge of the power semiconductor device. The barrier region may be p-doped and vertically confined, i.e., in and against the extension direction, by the drift region. The barrier region can be electrically floating.