- 专利标题: SHALLOW TRENCH TEXTURED REGIONS AND ASSOCIATED METHODS
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申请号: US16505283申请日: 2019-07-08
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公开(公告)号: US20190333959A1公开(公告)日: 2019-10-31
- 发明人: Homayoon HADDAD , Jutao JIANG
- 申请人: SiOnyx, LLC
- 主分类号: H01L27/146
- IPC分类号: H01L27/146 ; H01L31/0232 ; H01L31/028 ; H01L31/18
摘要:
Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor layer having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor layer and positioned to interact with electromagnetic radiation. The textured region can be formed from a series of shallow trench isolation features.
公开/授权文献
- US11069737B2 Shallow trench textured regions and associated methods 公开/授权日:2021-07-20
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