公开(公告)号：US20210335878A1

公开(公告)日：2021-10-28

申请号：US17369384

申请日：2021-07-07

申请人： SiOnyx, LLC

发明人： Homayoon HADDAD ,  Jutao JIANG

IPC分类号： H01L27/146 ,  B23K26/352 ,  B82Y40/00 ,  H01L31/18 ,  H01L31/028 ,  H01L31/0232

摘要： Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor layer having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor layer and positioned to interact with electromagnetic radiation. The textured region can be formed from a series of shallow trench isolation features.

公开(公告)号：US20230335544A1

公开(公告)日：2023-10-19

申请号：US18340231

申请日：2023-06-23

申请人： SiOnyx, LLC

发明人： Jutao JIANG ,  Jeffrey MCKEE ,  Martin U. PRALLE

IPC分类号： H01L25/16 ,  H01L27/146 ,  H04N23/56 ,  H04N25/70 ,  H04N25/71 ,  H04N25/771

CPC分类号： H01L25/167 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1464 ,  H01L27/14647 ,  H04N23/56 ,  H04N25/70 ,  H04N25/745 ,  H04N25/771 ,  H01L27/14625 ,  H01L27/14645 ,  H01L27/14649 ,  H01L2924/0002 ,  H04N25/131

摘要： A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.

公开(公告)号：US20220359481A1

公开(公告)日：2022-11-10

申请号：US17681252

申请日：2022-02-25

申请人： SiOnyx, LLC

发明人： Jutao JIANG ,  Jeffrey MCKEE ,  Martin U. PRALLE

IPC分类号： H01L25/16 ,  H01L27/146 ,  H04N5/225 ,  H04N5/3745 ,  H04N5/369 ,  H04N5/376

摘要： A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.

公开(公告)号：US20240363661A1

公开(公告)日：2024-10-31

申请号：US18307388

申请日：2023-04-26

申请人： SiOnyx, LLC

发明人： Jutao JIANG

IPC分类号： H01L27/146 ,  G02B3/00 ,  G02B3/08 ,  G02B5/18

CPC分类号： H01L27/1463 ,  G02B3/0037 ,  G02B3/08 ,  G02B5/1842 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14685

摘要： A new pixel architecture that enables a reduced dark current and improved signal-to-noise. A light-sensing pixel is configured to have a large optical acceptance aperture, a light concentration structure, and a pixel-sensing area smaller than the optical acceptance aperture, which allows for the collection of more photons without increasing dark current or read noise in the smaller pixel-sensing area. The pixel sensing area may be bordered by a deep trench isolation boundary, which combined with the smaller sensing area, can significantly improve night vision technology, making it more efficient and effective. Certain implementations may also include a metal-filled deep trench isolation boundary around each pixel to eliminate pixel-to-pixel crosstalk.

公开(公告)号：US20240339479A1

公开(公告)日：2024-10-10

申请号：US18749227

申请日：2024-06-20

申请人： SiOnyx, LLC

发明人： Homayoon HADDAD ,  Jutao JIANG ,  Jeffrey McKee ,  Drake Miller ,  Leonard Forbes ,  Chintamani Palsule

IPC分类号： H01L27/146

CPC分类号： H01L27/14638 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14698

摘要： Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor substrate having multiple doped regions forming at least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction. In one aspect, the textured region is operable to facilitate generation of an electrical signal from the detection of infrared electromagnetic radiation. In another aspect, interacting with electromagnetic radiation further includes increasing the semiconductor substrate's effective absorption wavelength as compared to a semiconductor substrate lacking a textured region.

公开(公告)号：US20240204033A1

公开(公告)日：2024-06-20

申请号：US18429727

申请日：2024-02-01

申请人： SiOnyx, LLC

发明人： Homayoon HADDAD ,  Jutao JIANG

IPC分类号： H01L27/146 ,  B23K26/352 ,  B82Y40/00 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/18

CPC分类号： H01L27/14643 ,  B23K26/355 ,  B82Y40/00 ,  H01L27/14625 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/182

摘要： Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor layer having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor layer and positioned to interact with electromagnetic radiation. The textured region can be formed from a series of shallow trench isolation features.

公开(公告)号：US20190333959A1

公开(公告)日：2019-10-31

申请号：US16505283

申请日：2019-07-08

申请人： SiOnyx, LLC

发明人： Homayoon HADDAD ,  Jutao JIANG

IPC分类号： H01L27/146 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/18

摘要： Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor layer having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor layer and positioned to interact with electromagnetic radiation. The textured region can be formed from a series of shallow trench isolation features.