Invention Application
- Patent Title: FLOATING BODY MEMORY CELL HAVING GATES FAVORING DIFFERENT CONDUCTIVITY TYPE REGIONS
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Application No.: US16452469Application Date: 2019-06-25
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Publication No.: US20190386007A1Publication Date: 2019-12-19
- Inventor: Peter L.D. CHANG , Uygar E. AVCI , David KENCKE , Ibrahim BAN
- Applicant: Intel Corporation
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/51 ; H01L29/16 ; H01L29/06 ; H01L27/092 ; H01L21/8238 ; H01L29/49 ; H01L29/78 ; H01L29/66 ; H01L21/28 ; H01L27/12
Abstract:
A method for fabricating floating body memory cells (FBCs), and the resultant FBCs where gates favoring different conductivity type regions are used is described. In one embodiment, a p type back gate with a thicker insulation is used with a thinner insulated n type front gate. Processing, which compensates for misalignment, which allows the different oxide and gate materials to be fabricated is described.
Public/Granted literature
- US10720434B2 Floating body memory cell having gates favoring different conductivity type regions Public/Granted day:2020-07-21
Information query
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