- 专利标题： FORMATION OF STACKED NANOSHEET SEMICONDUCTOR DEVICES
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申请号： US16428026申请日： 2019-05-31
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公开(公告)号： US20190393091A1公开(公告)日： 2019-12-26
- 发明人: Kangguo Cheng , Juntao Li , Heng Wu , Peng Xu
- 申请人： International Business Machines Corporation
- 主分类号： H01L21/822
- IPC分类号： H01L21/822 ; H01L27/092 ; H01L27/12 ; H01L21/8238 ; H01L21/84
摘要：
A method of fabricating a stacked semiconductor device includes forming nanosheet stacks including silicon layers and silicon germanium layers on a substrate. The method includes growing a first epitaxial layer on a source and drain and depositing an interlayer dielectric on the first epitaxial layer. The method includes etching the interlayer dielectric to expose the first epitaxial layer. The method includes etching a portion of the first epitaxial layer and growing a second epitaxial layer on the first epitaxial layer and etching the interlayer dielectric and depositing a first liner in a recess left by the etching, forming a pFET. The method includes etching a portion of the first liner and removing the second epitaxial layer leaving a portion of the first epitaxial layer exposed and depositing a second insulator layer on the first epitaxial layer, forming an nFET. The pFET and nFET are disposed adjacent to one another vertically.
公开/授权文献
- US10573561B2 Formation of stacked nanosheet semiconductor devices 公开/授权日：2020-02-25
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