Invention Application
- Patent Title: Methods of Forming Contact Features in Field-Effect Transistors
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Application No.: US16393543Application Date: 2019-04-24
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Publication No.: US20200006160A1Publication Date: 2020-01-02
- Inventor: Yi-Hsiung Lin , Yi-Hsun Chiu , Shang-Wen Chang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L27/092 ; H01L21/768 ; H01L29/08 ; H01L29/66 ; H01L29/78 ; H01L21/762 ; H01L23/522
Abstract:
A method includes forming an interlayer dielectric (ILD) layer over a first epitaxial source/drain (S/D) feature and a second epitaxial S/D feature, where the first epitaxial S/D feature is disposed adjacent to the second epitaxial S/D feature, forming a dummy contact feature in the ILD layer over the first epitaxial S/D feature, removing a portion of the dummy contact feature and a portion of the ILD layer disposed above the second epitaxial S/D feature to form a first trench, removing a remaining portion of the dummy contact feature to form a second trench, and forming a metal S/D contact in the first and the second trenches.
Public/Granted literature
- US11081403B2 Methods of forming contact features in field-effect transistors Public/Granted day:2021-08-03
Information query
IPC分类:
