- 专利标题： SOURCE-CHANNEL JUNCTION FOR III-V METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFETS)
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申请号： US16024706申请日： 2018-06-29
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公开(公告)号： US20200006480A1公开(公告)日： 2020-01-02
- 发明人: Cheng-Ying HUANG , Tahir GHANI , Jack KAVALIEROS , Anand MURTHY , Harold KENNEL , Gilbert DEWEY , Matthew METZ , Willy RACHMADY , Sean MA , Nicholas MINUTILLO
- 申请人： Cheng-Ying HUANG , Tahir GHANI , Jack KAVALIEROS , Anand MURTHY , Harold KENNEL , Gilbert DEWEY , Matthew METZ , Willy RACHMADY , Sean MA , Nicholas MINUTILLO
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/10 ; H01L29/08 ; H01L29/205 ; H01L29/417 ; H01L29/78 ; H01L29/66 ; H01L21/02
摘要：
Embodiments herein describe techniques, systems, and method for a semiconductor device. Embodiments herein may present a semiconductor device having a channel area including a channel III-V material, and a source area including a first portion and a second portion of the source area. The first portion of the source area includes a first III-V material, and the second portion of the source area includes a second III-V material. The channel III-V material, the first III-V material and the second III-V material may have a same lattice constant. Moreover, the first III-V material has a first bandgap, and the second III-V material has a second bandgap, the channel III-V material has a channel III-V material bandgap, where the channel material bandgap, the second bandgap, and the first bandgap form a monotonic sequence of bandgaps. Other embodiments may be described and/or claimed.
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