公开(公告)号：US20200006480A1

公开(公告)日：2020-01-02

申请号：US16024706

申请日：2018-06-29

申请人： Cheng-Ying HUANG ,  Tahir GHANI ,  Jack KAVALIEROS ,  Anand MURTHY ,  Harold KENNEL ,  Gilbert DEWEY ,  Matthew METZ ,  Willy RACHMADY ,  Sean MA ,  Nicholas MINUTILLO

发明人： Cheng-Ying HUANG ,  Tahir GHANI ,  Jack KAVALIEROS ,  Anand MURTHY ,  Harold KENNEL ,  Gilbert DEWEY ,  Matthew METZ ,  Willy RACHMADY ,  Sean MA ,  Nicholas MINUTILLO

IPC分类号： H01L29/06 ,  H01L29/10 ,  H01L29/08 ,  H01L29/205 ,  H01L29/417 ,  H01L29/78 ,  H01L29/66 ,  H01L21/02

摘要： Embodiments herein describe techniques, systems, and method for a semiconductor device. Embodiments herein may present a semiconductor device having a channel area including a channel III-V material, and a source area including a first portion and a second portion of the source area. The first portion of the source area includes a first III-V material, and the second portion of the source area includes a second III-V material. The channel III-V material, the first III-V material and the second III-V material may have a same lattice constant. Moreover, the first III-V material has a first bandgap, and the second III-V material has a second bandgap, the channel III-V material has a channel III-V material bandgap, where the channel material bandgap, the second bandgap, and the first bandgap form a monotonic sequence of bandgaps. Other embodiments may be described and/or claimed.

公开(公告)号：US20200098875A1

公开(公告)日：2020-03-26

申请号：US16142036

申请日：2018-09-26

申请人： Seung Hoon SUNG ,  Justin WEBER ,  Matthew METZ ,  Arnab SEN GUPTA ,  Abhishek SHARMA ,  Benjamin CHU-KUNG ,  Gilbert DEWEY ,  Charles KUO ,  Nazila HARATIPOUR ,  Shriram SHIVARAMAN ,  Van H. LE ,  Tahir GHANI ,  Jack T. KAVALIEROS ,  Sean MA

发明人： Seung Hoon SUNG ,  Justin WEBER ,  Matthew METZ ,  Arnab SEN GUPTA ,  Abhishek SHARMA ,  Benjamin CHU-KUNG ,  Gilbert DEWEY ,  Charles KUO ,  Nazila HARATIPOUR ,  Shriram SHIVARAMAN ,  Van H. LE ,  Tahir GHANI ,  Jack T. KAVALIEROS ,  Sean MA

IPC分类号： H01L29/417 ,  H01L29/08 ,  H01L29/205 ,  H01L29/49 ,  H01L29/45 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L27/108 ,  H01L29/267

摘要： Embodiments herein describe techniques for a thin-film transistor (TFT) above a substrate. The transistor includes a contact electrode having a conductive material above the substrate, an epitaxial layer above the contact electrode, and a channel layer including a channel material above the epitaxial layer and above the contact electrode. The channel layer is in contact at least partially with the epitaxial layer. A conduction band of the channel material and a conduction band of a material of the epitaxial layer are substantially aligned with an energy level of the conductive material of the contact electrode. A bandgap of the material of the epitaxial layer is smaller than a bandgap of the channel material. Furthermore, a gate electrode is above the channel layer, and separated from the channel layer by a gate dielectric layer. Other embodiments may be described and/or claimed.

公开(公告)号：US20200098657A1

公开(公告)日：2020-03-26

申请号：US16143001

申请日：2018-09-26

申请人： Arnab SEN GUPTA ,  Matthew METZ ,  Benjamin CHU-KUNG ,  Abhishek SHARMA ,  Van H. LE ,  Miriam R. RESHOTKO ,  Christopher J. JEZEWSKI ,  Ryan ARCH ,  Ande KITAMURA ,  Jack T. KAVALIEROS ,  Seung Hoon SUNG ,  Lawrence WONG ,  Tahir GHANI

发明人： Arnab SEN GUPTA ,  Matthew METZ ,  Benjamin CHU-KUNG ,  Abhishek SHARMA ,  Van H. LE ,  Miriam R. RESHOTKO ,  Christopher J. JEZEWSKI ,  Ryan ARCH ,  Ande KITAMURA ,  Jack T. KAVALIEROS ,  Seung Hoon SUNG ,  Lawrence WONG ,  Tahir GHANI

IPC分类号： H01L23/31 ,  H01L29/786 ,  H01L29/45 ,  H01L29/66 ,  H01L29/40

摘要： Embodiments herein describe techniques for a semiconductor device including a substrate and a transistor above the substrate. The transistor includes a channel layer above the substrate, a conductive contact stack above the substrate and in contact with the channel layer, and a gate electrode separated from the channel layer by a gate dielectric layer. The conductive contact stack may be a drain electrode or a source electrode. In detail, the conductive contact stack includes at least a metal layer, and at least a metal sealant layer to reduce hydrogen diffused into the channel layer through the conductive contact stack. Other embodiments may be described and/or claimed.

公开(公告)号：US20200098930A1

公开(公告)日：2020-03-26

申请号：US16141408

申请日：2018-09-25

申请人： Van H. LE ,  Tahi GHANI ,  Jack T. KAVALIEROS ,  Gilbert DEWEY ,  Matthew METZ ,  Miriam RESHOTKO ,  Benjamin CHU-KUNG ,  Shriram SHIVARAMAN ,  Abhishek SHARMA ,  NAZILA HARATIPOUR

发明人： Van H. LE ,  Tahi GHANI ,  Jack T. KAVALIEROS ,  Gilbert DEWEY ,  Matthew METZ ,  Miriam RESHOTKO ,  Benjamin CHU-KUNG ,  Shriram SHIVARAMAN ,  Abhishek SHARMA ,  NAZILA HARATIPOUR

IPC分类号： H01L29/786 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66 ,  H01L27/108 ,  H01L27/24

摘要： Embodiments herein describe techniques for a thin-film transistor (TFT), which may include a substrate oriented in a horizontal direction and a transistor above the substrate. The transistor includes a gate electrode above the substrate, a gate dielectric layer around the gate electrode, and a channel layer around the gate dielectric layer, all oriented in a vertical direction substantially orthogonal to the horizontal direction. Furthermore, a source electrode or a drain electrode is above or below the channel layer, separated from the gate electrode, and in contact with a portion of the channel layer. Other embodiments may be described and/or claimed.