Invention Application
- Patent Title: Split Gate Non-Volatile Memory Cells With Three-Dimensional FINFET Structure, And Method Of Making Same
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Application No.: US16028244Application Date: 2018-07-05
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Publication No.: US20200013786A1Publication Date: 2020-01-09
- Inventor: SERGUEI JOURBA , CATHERINE DECOBERT , FENG ZHOU , JINHO KIM , XIAN LIU , NHAN DO
- Applicant: Silicon Storage Technology, Inc.
- Main IPC: H01L27/11524
- IPC: H01L27/11524 ; H01L29/66 ; H01L29/423 ; H01L29/78 ; H01L29/788 ; H01L21/266 ; H01L21/768 ; H01L21/8234 ; H01L21/8238 ; H01L27/088
Abstract:
A memory device including a plurality of upwardly extending fins in a semiconductor substrate upper surface. A memory cell is formed on a first of the fins, and includes spaced apart source and drain regions in the first fin, with a channel region extending along top and opposing side surfaces of the first fin between the source and drain regions. A floating gate extends along a first portion of the channel region. A select gate extends along a second portion of the channel region. A control gate extends along the floating gate. An erase gate extends along the source region. A second of the fins has a length that extends in a first direction which is perpendicular to a second direction in which a length of the first fin extends. The source region is formed in the first fin at an intersection of the first and second fins.
Public/Granted literature
- US10727240B2 Split gate non-volatile memory cells with three-dimensional FinFET structure Public/Granted day:2020-07-28
Information query
IPC分类:
