Invention Application
- Patent Title: ACCESS TRANSMISSION GATE
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Application No.: US16461334Application Date: 2016-12-30
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Publication No.: US20200058705A1Publication Date: 2020-02-20
- Inventor: Abhishek A. Sharma , Ravi Pillarisetty , Van H. Le , Gilbert W. Dewey
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- International Application: PCT/US2016/069358 WO 20161230
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L27/092

Abstract:
Substrates, assemblies, and techniques for a transmission gate that includes an n-type back end transistor and a p-type back end transistor in parallel with the n-type back end transistor. The transmission gate can be on a non-silicon substrate and include a second gate, a p-type semiconducting layer over the second gate, an n-type semiconducting layer over the p-type semiconducting layer, a bit line over the n-type semiconducting layer, a first gate over the n-type semiconducting layer, and a source line over the n-type semiconducting layer. The transmission gate may be coupled to a memory element.
Public/Granted literature
- US10811461B2 Access transmission gate Public/Granted day:2020-10-20
Information query
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