- 专利标题: Semiconductor Device with Latchup Immunity
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申请号: US16103160申请日: 2018-08-14
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公开(公告)号: US20200058787A1公开(公告)日: 2020-02-20
- 发明人: Chi Dong Nguyen , Andreas Rupp
- 申请人: Infineon Technologies AG
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L29/10 ; H01L29/08 ; H01L29/66 ; H01L21/265 ; H01L21/266 ; H01L21/225
摘要:
A semiconductor device includes a body region of a second conductivity type, a body contact region of the second conductivity type formed in the body region and having a higher average doping concentration than the body region, a source region of a first conductivity type opposite the second conductivity type formed in the body region adjacent the body contact region, a drift zone of the first conductivity type spaced apart from the source region by a section of the body region which forms a channel region of the semiconductor device, and a gate electrode configured to control the channel region. The body contact region extends under a majority of the source region in a direction towards the channel region and has a doping concentration of at least 1e18 cm−3 under the majority of the source region, Additional semiconductor device embodiments and methods of manufacture are described.
公开/授权文献
- US10957792B2 Semiconductor device with latchup immunity 公开/授权日:2021-03-23