公开(公告)号：US10957792B2

公开(公告)日：2021-03-23

申请号：US16103160

申请日：2018-08-14

申请人： Infineon Technologies AG

发明人： Chi Dong Nguyen ,  Andreas Rupp

IPC分类号： H01L29/78 ,  H01L21/225 ,  H01L21/265 ,  H01L21/266 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66

摘要： A semiconductor device includes a body region of a second conductivity type, a body contact region of the second conductivity type formed in the body region and having a higher average doping concentration than the body region, a source region of a first conductivity type opposite the second conductivity type formed in the body region adjacent the body contact region, a drift zone of the first conductivity type spaced apart from the source region by a section of the body region which forms a channel region of the semiconductor device, and a gate electrode configured to control the channel region. The body contact region extends under a majority of the source region in a direction towards the channel region and has a doping concentration of at least 1e18 cm−3 under the majority of the source region. Additional semiconductor device embodiments and methods of manufacture are described.

公开(公告)号：US20200058787A1

公开(公告)日：2020-02-20

申请号：US16103160

申请日：2018-08-14

申请人： Infineon Technologies AG

发明人： Chi Dong Nguyen ,  Andreas Rupp

IPC分类号： H01L29/78 ,  H01L29/10 ,  H01L29/08 ,  H01L29/66 ,  H01L21/265 ,  H01L21/266 ,  H01L21/225

摘要： A semiconductor device includes a body region of a second conductivity type, a body contact region of the second conductivity type formed in the body region and having a higher average doping concentration than the body region, a source region of a first conductivity type opposite the second conductivity type formed in the body region adjacent the body contact region, a drift zone of the first conductivity type spaced apart from the source region by a section of the body region which forms a channel region of the semiconductor device, and a gate electrode configured to control the channel region. The body contact region extends under a majority of the source region in a direction towards the channel region and has a doping concentration of at least 1e18 cm−3 under the majority of the source region, Additional semiconductor device embodiments and methods of manufacture are described.