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公开(公告)号：US09225163B2
公开(公告)日：2015-12-29
申请号：US14070209
申请日：2013-11-01
发明人： Yiqun Cao , Andreas Rupp , Ulrich Glaser
IPC分类号： H02H9/04
摘要： A combined electro static discharge clamp for cascaded voltage pins can include an electronic switch, a plurality of discharge paths, and a plurality of trigger circuits. In response to detecting a voltage event across any two voltage pins, the trigger circuitry can turn on the electronic switch causing current caused by the voltage event to flow through one or more of the discharge paths instead of through functional circuitry which could potentially be damaged by the current caused by the voltage event.
摘要翻译： 用于级联电压引脚的组合静电放电钳可以包括电子开关，多个放电路径和多个触发电路。 响应于检测任何两个电压引脚上的电压事件，触发电路可以导通电子开关，导致由电压事件引起的电流流过一个或多个放电路径，而不是通过可能被 电流引起的电压事件。
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公开(公告)号：US20150124359A1
公开(公告)日：2015-05-07
申请号：US14070209
申请日：2013-11-01
发明人： Yiqun Cao , Andreas Rupp , Ulrich Glaser
IPC分类号： H02H9/04
摘要： A combined electro static discharge clamp for cascaded voltage pins can include an electronic switch, a plurality of discharge paths, and a plurality of trigger circuits. In response to detecting a voltage event across any two voltage pins, the trigger circuitry can turn on the electronic switch causing current caused by the voltage event to flow through one or more of the discharge paths instead of through functional circuitry which could potentially be damaged by the current caused by the voltage event.
摘要翻译： 用于级联电压引脚的组合静电放电钳可以包括电子开关，多个放电路径和多个触发电路。 响应于检测任何两个电压引脚上的电压事件，触发电路可以导通电子开关，导致由电压事件引起的电流流过一个或多个放电路径，而不是通过可能被 电流引起的电压事件。
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公开(公告)号：US20210257833A1
公开(公告)日：2021-08-19
申请号：US17147352
申请日：2021-01-12
摘要： A clamping circuit for protection against ESD events is described. In accordance with one exemplary embodiment, the circuit comprises the following: a first transistor having a control terminal and a load current path connected between a first contact and a second contact; an amplifier circuit having an amplifier input and an amplifier output connected to the control terminal of the transistor; and a trigger circuit, which is connected between the first contact and the second contact, and comprises a second transistor. The trigger circuit is configured to generate a voltage swing at the amplifier input as a reaction to a discharge current at the first contact by virtue of the fact that at least part of the discharge current drives a control terminal of the second transistor via an intrinsic capacitance of the second transistor.
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公开(公告)号：US10957792B2
公开(公告)日：2021-03-23
申请号：US16103160
申请日：2018-08-14
发明人： Chi Dong Nguyen , Andreas Rupp
IPC分类号： H01L29/78 , H01L21/225 , H01L21/265 , H01L21/266 , H01L29/08 , H01L29/10 , H01L29/66
摘要： A semiconductor device includes a body region of a second conductivity type, a body contact region of the second conductivity type formed in the body region and having a higher average doping concentration than the body region, a source region of a first conductivity type opposite the second conductivity type formed in the body region adjacent the body contact region, a drift zone of the first conductivity type spaced apart from the source region by a section of the body region which forms a channel region of the semiconductor device, and a gate electrode configured to control the channel region. The body contact region extends under a majority of the source region in a direction towards the channel region and has a doping concentration of at least 1e18 cm−3 under the majority of the source region. Additional semiconductor device embodiments and methods of manufacture are described.
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公开(公告)号：US20200058787A1
公开(公告)日：2020-02-20
申请号：US16103160
申请日：2018-08-14
发明人： Chi Dong Nguyen , Andreas Rupp
IPC分类号： H01L29/78 , H01L29/10 , H01L29/08 , H01L29/66 , H01L21/265 , H01L21/266 , H01L21/225
摘要： A semiconductor device includes a body region of a second conductivity type, a body contact region of the second conductivity type formed in the body region and having a higher average doping concentration than the body region, a source region of a first conductivity type opposite the second conductivity type formed in the body region adjacent the body contact region, a drift zone of the first conductivity type spaced apart from the source region by a section of the body region which forms a channel region of the semiconductor device, and a gate electrode configured to control the channel region. The body contact region extends under a majority of the source region in a direction towards the channel region and has a doping concentration of at least 1e18 cm−3 under the majority of the source region, Additional semiconductor device embodiments and methods of manufacture are described.
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6.发明授权Noise-tolerant active clamp with ESD protection capability in power up mode 有权上电模式下具有ESD保护功能的耐压有源钳位公开(公告)号：US09413166B2
公开(公告)日：2016-08-09
申请号：US14162410
申请日：2014-01-23
发明人： Andreas Rupp , Yiqun Cao , Ulrich Glaser
IPC分类号： H02H9/04
CPC分类号： H02H9/04
摘要： A circuit is described comprising electrostatic discharge (ESD) protection circuitry, keep-off circuitry and ESD detection circuitry. When the ESD detection circuitry detects an ESD event, the ESD detection circuitry is configured to both enable the ESD protection circuitry and disable the keep-off circuitry.
摘要翻译： 描述了包括静电放电（ESD）保护电路，保护断路电路和ESD检测电路的电路。 当ESD检测电路检测到ESD事件时，ESD检测电路被配置为启用ESD保护电路并禁用保护电路。
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7.发明申请NOISE-TOLERANT ACTIVE CLAMP WITH ESD PROTECTION CAPABILITY IN POWER UP MODE 有权上电模式下具有ESD保护能力的耐噪声有源钳位公开(公告)号：US20150207313A1
公开(公告)日：2015-07-23
申请号：US14162410
申请日：2014-01-23
发明人： Andreas Rupp , Yiqun Cao , Ulrich Glaser
IPC分类号： H02H9/04
CPC分类号： H02H9/04
摘要： A circuit is described comprising electrostatic discharge (ESD) protection circuitry, keep-off circuitry and ESD detection circuitry. When the ESD detection circuitry detects an ESD event, the ESD detection circuitry is configured to both enable the ESD protection circuitry and disable the keep-off circuitry.
摘要翻译： 描述了包括静电放电（ESD）保护电路，保护断路电路和ESD检测电路的电路。 当ESD检测电路检测到ESD事件时，ESD检测电路被配置为启用ESD保护电路并禁用保护电路。
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