One example includes a memory cell system that includes a quantizing loop that conducts a quantizing current in a first direction corresponding to a first stored memory state and to conduct the quantizing current in a second direction corresponding to a second stored memory state. The system also includes a bias element configured to provide a substantially constant flux bias of the quantizing loop in each of the first and second states of the stored memory state. The stored memory state can be read from the memory cell system in response to the substantially constant flux bias and a read current that is provided to the memory cell system. The system further includes a tunable energy element that is responsive to a write current that is provided to the memory cell system to change the state of the stored memory state between the first state and the second state.