- 专利标题: IMPRINT-FREE WRITE DRIVER FOR FERROELECTRIC MEMORY
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申请号: US16615780申请日: 2018-07-23
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公开(公告)号: US20200098415A1公开(公告)日: 2020-03-26
- 发明人: Huichu Liu , Sasikanth Manipatruni , Ian A. Young , Tanay Karnik , Daniel H. Morris , Kaushik Vaidyanathan
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 国际申请: PCT/US2018/043236 WO 20180723
- 主分类号: G11C11/22
- IPC分类号: G11C11/22 ; H01L27/11507 ; H01L49/02
摘要:
Described is an apparatus to reduce or eliminate imprint charge, wherein the apparatus which comprises: a source line; a bit-line; a memory bit-cell coupled to the source line and the bit-line; a first multiplexer coupled to the bit-line; a second multiplexer coupled to the source-line; a first driver coupled to the first multiplexer; a second driver coupled to the second multiplexer; and a current source coupled to the first and second drivers.
公开/授权文献
- US11037614B2 Imprint-free write driver for ferroelectric memory 公开/授权日:2021-06-15
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