Invention Application
- Patent Title: MEMORY CONTROLLER INCLUDING ERROR CORRECTION CODE CIRCUIT, MEMORY SYSTEM INCLUDING THE MEMORY CONTROLLER, AND OPERATING METHOD OF THE MEMORY SYSTEM
-
Application No.: US16405427Application Date: 2019-05-07
-
Publication No.: US20200159618A1Publication Date: 2020-05-21
- Inventor: Eun Chu OH , Young-jin Cho , Young-geun Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@18210db8
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G11C29/52 ; G11C13/00 ; G11C11/16

Abstract:
A memory controller is provided. The memory controller includes an error correction code (ECC) circuit configured to correct an error of a read codeword provided from a memory device, the ECC circuit including: a codeword combination generator configured to receive a first read codeword including a plurality of first read codeword bit values that are read from a first region of the memory device, generate a change codeword by changing values of one or more of the plurality of first read codeword bit values, and provide a codeword combination including the change codeword; and an ECC decoder including a plurality of ECC engines, wherein the ECC decoder is configured to perform ECC decoding in parallel on a plurality of codewords included in the codeword combination.
Public/Granted literature
Information query