Invention Application
- Patent Title: DUAL DEMARCATION VOLTAGE SENSING BEFORE WRITES
-
Application No.: US16685719Application Date: 2019-11-15
-
Publication No.: US20200160908A1Publication Date: 2020-05-21
- Inventor: Daniel Chu , Kiran Pangal , Mase Taub , Sandeep Guliani , Raymond Zeng
- Applicant: Intel Corporation
- Main IPC: G11C13/00
- IPC: G11C13/00
Abstract:
Nonvolatile memory (e.g. phase change memory) devices, systems, and methods that minimize energy expenditure and wear while providing greatly improved error rate with respect to marginal bits are disclosed and described.
Public/Granted literature
- US11024380B2 Dual demarcation voltage sensing before writes Public/Granted day:2021-06-01
Information query
