Invention Application
- Patent Title: METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE COMPRISING A PASTE LAYER AND SEMICONDUCTOR DEVICE
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Application No.: US16685318Application Date: 2019-11-15
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Publication No.: US20200161269A1Publication Date: 2020-05-21
- Inventor: Francisco Javier Santos Rodriguez , Fabian Craes , Barbara Eichinger , Martin Mischitz , Frederik Otto , Fabien Thion
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@41bc3ca7
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/48 ; H01L21/428

Abstract:
A semiconductor device and method for fabricating a semiconductor device, comprising a paste layer is disclosed. In one example the method comprises attaching a substrate to a carrier, wherein the substrate comprises a plurality of semiconductor dies. A layer of a paste is applied to the substrate. The layer above cutting regions of the substrate is structured. The substrate is cut along the cutting regions.
Public/Granted literature
- US11329021B2 Method for fabricating a semiconductor device comprising a paste layer and semiconductor device Public/Granted day:2022-05-10
Information query
IPC分类: