- 专利标题: Metal Oxide Film and Semiconductor Device
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申请号: US16739647申请日: 2020-01-10
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公开(公告)号: US20200161435A1公开(公告)日: 2020-05-21
- 发明人: Yasuharu Hosaka , Toshimitsu OBONAI , Yukinori SHIMA , Masami JINTYOU , Daisuke KUROSAKI , Takashi HAMOCHI , Junichi KOEZUKA , Kenichi OKAZAKI , Shunpei YAMAZAKI
- 申请人: Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址: JP Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Kanagawa-ken
- 优先权: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2d8112a8 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@78380a5a
- 主分类号: H01L29/24
- IPC分类号: H01L29/24 ; H01L29/786 ; C04B35/622 ; C04B35/453 ; H01L27/12 ; H01L29/778 ; C23C14/58 ; C23C14/08 ; C04B35/01 ; C03C17/245
摘要:
A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.
公开/授权文献
- US11063125B2 Metal oxide film and semiconductor device 公开/授权日:2021-07-13
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