Invention Application
- Patent Title: ETCHING METHOD AND SUBSTRATE PROCESSING APPARATUS
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Application No.: US16704129Application Date: 2019-12-05
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Publication No.: US20200185229A1Publication Date: 2020-06-11
- Inventor: Yoshimitsu KON , Atsushi UTO , Lifu LI , Tomonori MIWA
- Applicant: Tokyo Electron Limited
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@e17e193 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3539b787
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L21/67 ; H01L21/3065
Abstract:
A method of etching a substrate including an etching film and a mask formed on the etching film is provided. The mask includes a first pattern of a first recess having a first opening and a second pattern of a second recess having a second opening. The method includes etching the etching film to a predetermined depth; depositing a protective film on the mask after the etching; and etching the etching film after the depositing. The first opening is smaller than the second opening. As a result of the depositing, the first opening of the first pattern is clogged and the second opening of the second pattern is not clogged.
Public/Granted literature
- US11264248B2 Etching method and substrate processing apparatus Public/Granted day:2022-03-01
Information query
IPC分类:
