公开(公告)号：US20210057228A1

公开(公告)日：2021-02-25

申请号：US16991938

申请日：2020-08-12

申请人： Tokyo Electron Limited

发明人： Satoshi YAMADA ,  Koki CHINO ,  Yoshimitsu KON

IPC分类号： H01L21/311 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/67

摘要： In a disclosed method, etching a film by using plasma of a first processing gas and etching the film by using plasma of a second processing gas are alternately repeated. The first processing gas and the second processing gas each include a fluorocarbon gas. In etching the film by using the plasma of the first processing gas and etching the film by using the plasma of the second processing gas, radio frequency power is used to attract ions to the substrate. The first processing gas further includes an additive gas that is a source for nitrogen or sulfur and fluorine. In the first processing gas, the flow rate of the additive gas is smaller than the flow rate of the fluorocarbon gas.

公开(公告)号：US20200185229A1

公开(公告)日：2020-06-11

申请号：US16704129

申请日：2019-12-05

申请人： Tokyo Electron Limited

发明人： Yoshimitsu KON ,  Atsushi UTO ,  Lifu LI ,  Tomonori MIWA

IPC分类号： H01L21/308 ,  H01L21/67 ,  H01L21/3065

摘要： A method of etching a substrate including an etching film and a mask formed on the etching film is provided. The mask includes a first pattern of a first recess having a first opening and a second pattern of a second recess having a second opening. The method includes etching the etching film to a predetermined depth; depositing a protective film on the mask after the etching; and etching the etching film after the depositing. The first opening is smaller than the second opening. As a result of the depositing, the first opening of the first pattern is clogged and the second opening of the second pattern is not clogged.

公开(公告)号：US20230326718A1

公开(公告)日：2023-10-12

申请号：US18330501

申请日：2023-06-07

申请人： Tokyo Electron Limited

发明人： Hikoichiro SASAKI ,  Shirong GUO ,  Takenobu IKEDA ,  Yoshimitsu KON

IPC分类号： H01J37/32 ,  H01L21/311

CPC分类号： H01J37/32146 ,  H01J37/32128 ,  H01J37/32449 ,  H01L21/31116 ,  H01J2237/334 ,  H01J37/32091

摘要： A plasma processing method includes:



a) providing a substrate on a substrate support;
b) supplying a process gas;
c) periodically supplying a pulse voltage to the substrate support; and
d) periodically supplying RF power and generating plasma from the process gas to etch a silicon-containing film included in the substrate. The pulse voltage is negative. A first period in which a first pulse voltage is supplied and a second period in which the pulse voltage is not supplied or a second pulse voltage whose absolute value is less than that of the first pulse voltage is supplied are repeated in c). A third period in which first RF power is supplied and a fourth period in which the RF power is not supplied or second RF power less than the first RF power is supplied are repeated in d). The first period starts before a start of the third period.

公开(公告)号：US20230268190A1

公开(公告)日：2023-08-24

申请号：US18112302

申请日：2023-02-21

申请人： Tokyo Electron Limited

发明人： Atsuki HASHIMOTO ,  Sho SAITOH ,  Yoshimitsu KON

IPC分类号： H01L21/311 ,  H01J37/32

CPC分类号： H01L21/31116 ,  H01J37/32449 ,  H01L21/31144 ,  H01J37/32174 ,  H01J2237/3346

摘要： A plasma processing method executed by a plasma processing apparatus with a chamber is provided. The method includes (a) providing in the chamber a substrate that includes an etching film and a mask film, the substrate including a first region where the etching film is exposed and a second region where the mask film is exposed, (b) supplying into the chamber a processing gas including a carbon-containing gas to generate plasma from the processing gas to etch the etching film and to form a protective film on the mask film, and (c) supplying the processing gas into the chamber to generate plasma from the processing gas to further etch the etching film and to remove at least part of the protective film. (b) includes a first period and a second period, and a flow rate of the carbon-containing gas in the first period is greater than a flow rate of the carbon-containing gas in the second period, and (c) includes a third period and a fourth period, and a flow rate of the carbon-containing gas in the third period is less than the flow rate of the carbon-containing gas in the second period and a flow rate of the carbon-containing gas in the fourth period.

公开(公告)号：US20240213031A1

公开(公告)日：2024-06-27

申请号：US18395879

申请日：2023-12-26

申请人： Tokyo Electron Limited

发明人： Atsuki HASHIMOTO ,  Sho SAITOH ,  Yoshimitsu KON

IPC分类号： H01L21/311 ,  H01J37/32 ,  H01L21/02

CPC分类号： H01L21/31116 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02175 ,  H01J37/32449 ,  H01J37/32807 ,  H01J2237/3346

摘要： An etching method includes (a) providing a substrate including a first region and a second region below the first region, the first region containing a first material and including an opening, the second region containing a second material different from the first material, the second material containing silicon; (b) forming a metal-containing deposition on the first region by using first plasma generated from a first process gas containing halogen, metal, and at least one of carbon or hydrogen; and (c) after (b), etching the second region via the opening by using second plasma generated from a second process gas different from the first process gas.

公开(公告)号：US20210082712A1

公开(公告)日：2021-03-18

申请号：US17010983

申请日：2020-09-03

申请人： Tokyo Electron Limited

发明人： Koki CHINO ,  Satoshi YAMADA ,  Yoshimitsu KON

IPC分类号： H01L21/311 ,  H01L21/67 ,  H01J37/32

摘要： A disclosed method etches a silicon oxide film of a substrate on which a mask is provided. The method includes performing first plasma processing on a substrate by using a first plasma formed from a first processing gas including a fluorocarbon gas, a fluorine-free carbon-containing gas, and an oxygen-containing gas. The method further includes performing second plasma processing on the substrate by using a second plasma formed from a second processing gas including a fluorocarbon gas. A temperature of the substrate during the first plasma processing is lower than the temperature of the substrate during the second plasma processing.

公开(公告)号：US20200273712A1

公开(公告)日：2020-08-27

申请号：US16801583

申请日：2020-02-26

申请人： Tokyo Electron Limited

发明人： Atsushi UTO ,  Yoshimitsu KON ,  Lifu LI ,  Yuji NAGAI

IPC分类号： H01L21/3065 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32 ,  H01L21/311 ,  H01L21/02

摘要： A deposition processing method includes a step of depositing deposits onto a substrate using a first plasma generated in a processing condition of depositing the deposits onto the substrate, which is basically a first processing condition, and a preceding step performed before the step of depositing the deposits onto the substrate, wherein, within the step of depositing the deposits transited from the preceding step, the processing condition is controlled so as to deposit less deposits than that in the first processing condition until a state of the first plasma is stabilized.