公开(公告)号：US20250112031A1

公开(公告)日：2025-04-03

申请号：US18980363

申请日：2024-12-13

Applicant: Tokyo Electron Limited

Inventor： Takashi ARAMAKI ,  Lifu LI

IPC: H01J37/32

Abstract: A substrate processing apparatus includes a processing container, a stage, an edge ring, a lifter, and circuitry. The stage has a first mounting surface and a second mounting surface. The edge ring is placed on the second mounting surface. The lifter moves the edge ring with respect to the second mounting surface. Plasma processing of the substrate is performed while the substrate is positioned on the first mounting surface. Further, a first cleaning process is performed in which a first bias RF power is supplied to the stage while the edge ring is separated from the second mounting surface and then a second cleaning process is formed in which a second bias RF power is supplied to the stage while the edge ring is separated from the second mounting surface.

公开(公告)号：US20220301830A1

公开(公告)日：2022-09-22

申请号：US17654126

申请日：2022-03-09

Applicant: Tokyo Electron Limited

Inventor： Lifu LI ,  Hironobu KUDO ,  Hiroshi TSUJIMOTO

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a chamber, a substrate support including a bottom electrode, and a top electrode assembly disposed above the substrate support. The top electrode assembly includes a top electrode plate and a thermally conductive plate disposed above the top electrode plate. The top electrode assembly includes a coolant flow path disposed within the thermally conductive plate. The top electrode assembly includes at least one heating element thermally connected to the thermally conductive plate, the heating element being disposed at a location that does not overlap the coolant flow path in a height direction of the plasma processing apparatus. The plasma processing apparatus includes a controller that controls at least one among a coolant flowing through the coolant flow path and the heating element, based on a temperature of the top electrode plate detected by a temperature sensor, to adjust the temperature of the top electrode plate.

公开(公告)号：US20250104979A1

公开(公告)日：2025-03-27

申请号：US18976345

申请日：2024-12-11

Applicant: Tokyo Electron Limited

Inventor： Toshiki AKAMA ,  Shusei KATO ,  Gyeong min PARK ,  Nobutaka SASAKI ,  Takashi ARAMAKI ,  Lifu LI

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

Abstract: A substrate processing system including a plasma processing apparatus including a processing container, a decompressed transferrer connected to the plasma processing apparatus, and a controller, a substrate support, a ring placing surface for receiving an edge ring, and an electrostatic chuck for electrostatically attracting the edge ring to the ring placing surface, a supply path for supplying a gas between a rear surface of the edge ring and the ring placing surface, and a pressure sensor connected to the supply path, the edge ring is placed on the ring placing surface, gas is supplied to the supply path to maintain a pressure in the supply path to be higher than a pressure in the processing container, the pressure in the supply path is measured by the pressure sensor to determine a placing state of the edge ring on the ring placing surface.

公开(公告)号：US20240222090A1

公开(公告)日：2024-07-04

申请号：US18541526

申请日：2023-12-15

Applicant: Tokyo Electron Limited

Inventor： Takashi ARAMAKI ,  Lifu LI ,  Hiroshi TSUJIMOTO

IPC: H01J37/32

CPC classification number: H01J37/32715 ,  H01J37/32568 ,  H01J37/32091 ,  H01J2237/2007

Abstract: The purpose of the present disclosure is to provide a plasma processing apparatus including: a plasma processing chamber; a first bias electrode disposed in an electrostatic chuck to have a first outer diameter; a second bias electrode disposed in the electrostatic chuck to have a second outer diameter; a third bias electrode disposed in the electrostatic chuck to have a third outer diameter; a first DC power supply; a second DC power supply; a third DC power supply; a voltage adder; a first voltage pulse generator electrically connected to the first bias electrode and configured to generate a first voltage pulse signal; a second voltage pulse generator electrically connected to the second bias electrode and configured to generate a second voltage pulse signal; and a third voltage pulse generator electrically connected to the third bias electrode and configured to generate a third voltage pulse signal.

公开(公告)号：US20240128058A1

公开(公告)日：2024-04-18

申请号：US18381222

申请日：2023-10-18

Applicant: Tokyo Electron Limited

Inventor： Takashi ARAMAKI ,  Kojiro MATSUZAKA ,  Atsushi OGATA ,  Lifu LI ,  Gyeong Min PARK

IPC: H01J37/32

CPC classification number: H01J37/32513 ,  H01J2237/334

Abstract: A substrate processing apparatus comprises a substrate support disposed in the chamber, a shutter including a valve body configured to open and close an opening of the chamber, and a baffle plate disposed between an inner peripheral side of the chamber and the substrate support and having a vertically inclined portion at an end portion on a substrate support side, and a contact member disposed on a side surface of the substrate support and formed of a conductive elastic member. In a state where the shutter is closed, contact between the end portion on the substrate support side and the contact member is maintained.

公开(公告)号：US20210335577A1

公开(公告)日：2021-10-28

申请号：US17241442

申请日：2021-04-27

Applicant: Tokyo Electron Limited

Inventor： Ikko TANAKA ,  Lifu LI ,  Hiroshi TSUJIMOTO ,  Atsushi TERASAWA

IPC: H01J37/32

Abstract: A substrate processing apparatus includes a substrate stage on which a substrate is disposed, a first radio-frequency power supply configured to supply first radio-frequency power having a first frequency to the substrate stage, an impedance converter configured to convert an impedance on a load side seen from the first radio-frequency power supply into a set impedance, a second radio-frequency power supply configured to supply second radio-frequency power having a second frequency lower than the first frequency to the substrate stage, and a controller configured to control the set impedance of the impedance converter, and the controller sets the set impedance according to a substrate processing.

公开(公告)号：US20250166975A1

公开(公告)日：2025-05-22

申请号：US19032746

申请日：2025-01-21

Applicant: Tokyo Electron Limited

Inventor： Lifu LI ,  Junya KURAMOTO ,  Takashi ARAMAKI ,  Hiroshi TSUJIMOTO

IPC: H01J37/32

Abstract: A substrate processing apparatus includes a processing chamber having a substrate support configured to support a substrate, a gas supply configured to supply a plurality of processing gases to the processing chamber, a plasma generator configured to generate plasma of the processing gases, and a controller configured to control the gas supply. The gas supply includes a first gas supply configured to supply a first processing gas to the processing chamber, and a second gas supply configured to inject a second processing gas to the first processing gas supplied to the processing chamber.

公开(公告)号：US20220254611A1

公开(公告)日：2022-08-11

申请号：US17666871

申请日：2022-02-08

Applicant: Tokyo Electron Limited

Inventor： Lifu LI ,  Takaki KOBUNE

IPC: H01J37/32 ,  G05D3/00 ,  H05B1/02

Abstract: A plasma processing apparatus includes: a plasma processing chamber; a first conductive member disposed in the plasma processing chamber and having a first surface; a second conductive member having a second surface facing the first surface of the first conductive member; a third member disposed on at least one selected from the group of the first conductive member and the second conductive member and having a shape that varies according to a temperature change of the third member; and a control mechanism configured to change a temperature of the third member.

公开(公告)号：US20210305022A1

公开(公告)日：2021-09-30

申请号：US17195728

申请日：2021-03-09

Applicant: Tokyo Electron Limited

Inventor： Hiroshi TSUJIMOTO ,  Yusei KUWABARA ,  Lifu LI

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/67 ,  H01L21/683

Abstract: A substrate support includes a substrate support surface on which a substrate is placed, a ring support surface on which an edge ring is placed to surround the substrate placed on the substrate support surface, and an electrode configured to attract and hold the edge ring on the ring support surface by an electrostatic force. A heat transfer sheet is attached to a surface of the edge ring facing the ring support surface, and the edge ring is placed on the ring support surface via the heat transfer sheet. A conductive film is formed on a surface of the heat transfer sheet facing the ring support surface. Further, the edge ring is held on the ring support surface by attracting and holding the conductive film of the heat transfer sheet attached to the edge ring onto the ring support surface by the electrostatic force generated by the electrode.

公开(公告)号：US20200185229A1

公开(公告)日：2020-06-11

申请号：US16704129

申请日：2019-12-05

Applicant: Tokyo Electron Limited

Inventor： Yoshimitsu KON ,  Atsushi UTO ,  Lifu LI ,  Tomonori MIWA

IPC: H01L21/308 ,  H01L21/67 ,  H01L21/3065

Abstract: A method of etching a substrate including an etching film and a mask formed on the etching film is provided. The mask includes a first pattern of a first recess having a first opening and a second pattern of a second recess having a second opening. The method includes etching the etching film to a predetermined depth; depositing a protective film on the mask after the etching; and etching the etching film after the depositing. The first opening is smaller than the second opening. As a result of the depositing, the first opening of the first pattern is clogged and the second opening of the second pattern is not clogged.