Invention Application
- Patent Title: METHODS OF FORMING A SEMICONDUCTOR DEVICE AND RELATED SEMICONDUCTOR DEVICES
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Application No.: US16235665Application Date: 2018-12-28
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Publication No.: US20200211981A1Publication Date: 2020-07-02
- Inventor: Rohit Kothari , Adam L. Olson , John D. Hopkins , Jeslin J. Wu
- Applicant: Micron Technology, Inc.
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/311 ; H01L21/3105 ; H01L21/762
Abstract:
A method of forming a semiconductor device comprising forming a patterned resist over a stack comprising at least one material and removing a portion of the stack exposed through the patterned resist to form a stack opening. A portion of the patterned resist is laterally removed to form a trimmed resist and an additional portion of the stack exposed through the trimmed resist is removed to form steps in sidewalls of the stack. A dielectric material is formed between the sidewalls of the stack to substantially completely fill the stack opening, and the dielectric material is planarized. Additional methods are disclosed, as well as semiconductor devices.
Public/Granted literature
- US11127691B2 Methods of forming a semiconductor device Public/Granted day:2021-09-21
Information query
IPC分类:
