- 专利标题： POWER SWITCHING DEVICES WITH HIGH DV/DT CAPABILITY AND METHODS OF MAKING SUCH DEVICES
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申请号： US16811526申请日： 2020-03-06
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公开(公告)号： US20200212908A1公开(公告)日： 2020-07-02
- 发明人: Qingchun Zhang , Adam Barkley , Sei-Hyung Ryu , Brett Hull
- 申请人： Cree, Inc.
- 主分类号： H03K17/12
- IPC分类号： H03K17/12 ; H01L29/739 ; H01L29/417 ; H01L29/16 ; H01L29/06 ; H01L29/10 ; H01L29/78 ; H01L29/423
摘要：
Power switching devices include a semiconductor layer structure that has an active region and an inactive region. The active region includes a plurality of unit cells and the inactive region includes a field insulating layer on the semiconductor layer structure and a gate bond pad on the field insulating layer opposite the semiconductor layer structure. A gate insulating pattern is provided on the semiconductor layer structure between the active region and the field insulating layer, and at least one source/drain contact is provided on the semiconductor layer structure between the gate insulating pattern and the field insulating layer.
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