- 专利标题： Memory Device with a Fuse Protection Circuit
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申请号： US16830429申请日： 2020-03-26
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公开(公告)号： US20200227126A1公开(公告)日： 2020-07-16
- 发明人: Yu-Der Chih , Chen-Ming Hung , Jen-Chou Tseng , Jam-Wem Lee , Ming-Hsiang Song , Shu-Chuan Lee , Shao-Yu Chou , Yu-Ti Su
- 申请人： Taiwan Semiconductor Manufacturing Company Limited
- 主分类号： G11C17/18
- IPC分类号： G11C17/18 ; G11C17/16 ; H01L27/02 ; G11C7/24
摘要：
A memory device includes a memory circuit and a fuse protection circuit. The memory circuit includes a program line and a fuse. The program line is configured to receive a program voltage for programming the fuse. The fuse protection circuit is coupled to the memory circuit and is configured to prevent unintentional programming of the fuse.
公开/授权文献
- US10803967B2 Memory device with a fuse protection circuit 公开/授权日：2020-10-13
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