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公开(公告)号：US20200227126A1
公开(公告)日：2020-07-16
申请号：US16830429
申请日：2020-03-26
发明人： Yu-Der Chih , Chen-Ming Hung , Jen-Chou Tseng , Jam-Wem Lee , Ming-Hsiang Song , Shu-Chuan Lee , Shao-Yu Chou , Yu-Ti Su
摘要： A memory device includes a memory circuit and a fuse protection circuit. The memory circuit includes a program line and a fuse. The program line is configured to receive a program voltage for programming the fuse. The fuse protection circuit is coupled to the memory circuit and is configured to prevent unintentional programming of the fuse.
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公开(公告)号：US10109366B2
公开(公告)日：2018-10-23
申请号：US15493964
申请日：2017-04-21
发明人： Yu-Der Chih , Chen-Ming Hung , Jen-Chou Tseng , Jam-Wem Lee , Ming-Hsiang Song , Shu-Chuan Lee , Shao-Yu Chou , Yu-Ti Su
摘要： A memory device includes a memory circuit and a fuse protection circuit. The memory circuit includes a memory cell and a program line. The memory cell includes a fuse. The program line is configured to receive a program voltage for programming the fuse. The fuse protection circuit is coupled to the memory circuit and is configured to prevent unintentional programming of the fuse.
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公开(公告)号：US20190252032A1
公开(公告)日：2019-08-15
申请号：US16392741
申请日：2019-04-24
发明人： Yu-Der Chih , Chen-Ming Hung , Jen-Chou Tseng , Jam-Wem Lee , Ming-Hsiang Song , Shu-Chuan Lee , Shao-Yu Chou , Yu-Ti Su
CPC分类号： G11C17/18 , G11C7/24 , G11C17/16 , H01L27/0251
摘要： A memory device includes a memory circuit and a fuse protection circuit. The memory circuit includes a memory cell and a program line. The memory cell includes a fuse. The program line is configured to receive a program voltage for programming the fuse. The fuse protection circuit is coupled to the memory circuit and is configured to prevent unintentional programming of the fuse.
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公开(公告)号：US10991442B2
公开(公告)日：2021-04-27
申请号：US17013967
申请日：2020-09-08
发明人： Yu-Der Chih , Chen-Ming Hung , Jen-Chou Tseng , Jam-Wem Lee , Ming-Hsiang Song , Shu-Chuan Lee , Shao-Yu Chou , Yu-Ti Su
摘要： A memory device includes a memory circuit and a fuse protection circuit. The memory circuit includes a program line and a fuse. The program line is configured to receive a program voltage for programming the fuse. The fuse protection circuit is coupled to the memory circuit and is configured to prevent unintentional programming of the fuse.
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公开(公告)号：US10803967B2
公开(公告)日：2020-10-13
申请号：US16830429
申请日：2020-03-26
发明人： Yu-Der Chih , Chen-Ming Hung , Jen-Chou Tseng , Jam-Wem Lee , Ming-Hsiang Song , Shu-Chuan Lee , Shao-Yu Chou , Yu-Ti Su
摘要： A memory device includes a memory circuit and a fuse protection circuit. The memory circuit includes a program line and a fuse. The program line is configured to receive a program voltage for programming the fuse. The fuse protection circuit is coupled to the memory circuit and is configured to prevent unintentional programming of the fuse.
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公开(公告)号：US20190019565A1
公开(公告)日：2019-01-17
申请号：US16133783
申请日：2018-09-18
发明人： Yu-Der Chih , Chen-Ming Hung , Jen-Chou Tseng , Jam-Wem Lee , Ming-Hsiang Song , Shu-Chuan Lee , Shao-Yu Chou , Yu-Ti Su
摘要： A memory device includes a memory circuit and a fuse protection circuit. The memory circuit includes a memory cell and a program line. The memory cell includes a fuse. The program line is configured to receive a program voltage for programming the fuse. The fuse protection circuit is coupled to the memory circuit and is configured to prevent unintentional programming of the fuse.
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公开(公告)号：US20180166143A1
公开(公告)日：2018-06-14
申请号：US15493964
申请日：2017-04-21
发明人： Yu-Der Chih , Chen-Ming Hung , Jen-Chou Tseng , Jam-Wem Lee , Ming-Hsiang Song , Shu-Chuan Lee , Shao-Yu Chou , Yu-Ti Su
CPC分类号： G11C17/18 , G11C7/24 , G11C17/16 , H01L27/0251
摘要： A memory device includes a memory circuit and a fuse protection circuit. The memory circuit includes a memory cell and a program line. The memory cell includes a fuse. The program line is configured to receive a program voltage for programming the fuse. The fuse protection circuit is coupled to the memory circuit and is configured to prevent unintentional programming of the fuse.
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公开(公告)号：US10283210B2
公开(公告)日：2019-05-07
申请号：US16133783
申请日：2018-09-18
发明人： Yu-Der Chih , Chen-Ming Hung , Jen-Chou Tseng , Jam-Wem Lee , Ming-Hsiang Song , Shu-Chuan Lee , Shao-Yu Chou , Yu-Ti Su
摘要： A memory device includes a memory circuit and a fuse protection circuit. The memory circuit includes a memory cell and a program line. The memory cell includes a fuse. The program line is configured to receive a program voltage for programming the fuse. The fuse protection circuit is coupled to the memory circuit and is configured to prevent unintentional programming of the fuse.
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