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    System and method for reducing cell area and current leakage in anti-fuse cell array
    1.
    发明授权
    System and method for reducing cell area and current leakage in anti-fuse cell array 有权

    公开(公告)号：US11437386B2

    公开(公告)日：2022-09-06

    申请号：US16786499

    申请日：2020-02-10

    申请人： Taiwan Semiconductor Manufacturing Company Limited

    发明人： Meng-Sheng Chang ,  Chia-En Huang ,  Shao-Yu Chou ,  Yih Wang

    IPC分类号： H01L27/112 ,  H01L23/528 ,  H01L23/532 ,  G11C17/16 ,  G06F30/392 ,  H01L23/525 ,  G11C17/18

    摘要： A memory device includes a first memory cell having a first polysilicon line associated with a first read word line and intersecting a first active region and a second active region, and a second polysilicon line and a first CPODE associated with a first program word line, the second polysilicon line intersecting the first active region and the first CPODE intersecting the second active region. The memory device also includes a second memory cell adjacent to the first memory cell, the second memory cell having a third polysilicon line associated with a second read word line and intersecting the first active region and the second active region, and a fourth polysilicon line and a second CPODE associated with a second program word line, the fourth polysilicon line intersecting the second active region and the second CPODE intersecting the first active region to form a cross-arrangement of CPODE.

    Word line driver
    7.
    发明授权
    Word line driver 有权

    公开(公告)号：US10109365B2

    公开(公告)日：2018-10-23

    申请号：US15492156

    申请日：2017-04-20

    申请人： Taiwan Semiconductor Manufacturing Company Limited

    发明人： Yuhsiang Chen ,  Shao-Yu Chou ,  Yu-Der Chih

    IPC分类号： G11C8/00 ,  G11C17/18

    摘要： A word line driver comprising a select word line level shifter configured to generate at least one output signal in the first voltage domain or a second voltage domain and a control word line level shifter coupled to the select word line level shifter and configured to generate at least one output signal in the second voltage domain or a third voltage domain based, at least in part, on the at least one output signal generated by the select word line level shifter.