Invention Application
- Patent Title: TEMPERATURE-SENSITIVE BIAS CIRCUIT
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Application No.: US16252007Application Date: 2019-01-18
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Publication No.: US20200235729A1Publication Date: 2020-07-23
- Inventor: Anthony K. Stamper , Vibhor Jain
- Applicant: GLOBALFOUNDRIES Inc.
- Main IPC: H03K17/14
- IPC: H03K17/14 ; G05D23/19 ; G05D23/24 ; H01C7/04 ; G01K3/00

Abstract:
One illustrative device includes, among other things, an active device comprising a first terminal, a first bias resistor connected to the first terminal, and a first resistor comprising a first phase transition material connected in parallel with the first bias transistor, wherein the first phase transition material exhibits a first low conductivity phase for temperatures less than a first phase transition temperature and a first high conductivity phase for temperatures greater than the first phase transition temperature.
Public/Granted literature
- US10931274B2 Temperature-sensitive bias circuit Public/Granted day:2021-02-23
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