- 专利标题: FOCUS AND OVERLAY IMPROVEMENT BY MODIFYING A PATTERNING DEVICE
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申请号: US16099452申请日: 2017-05-17
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公开(公告)号: US20200310242A1公开(公告)日: 2020-10-01
- 发明人: Richard Johannes Franciscus VAN HAREN , Reiner Maria JUNGBLUT , Leon Paul VAN DIJK , Willem Seine Christian ROELOFS , Wim Tjibbo TEL , Stefan HUNSCHE , Maurits VAN DER SCHAAR
- 申请人: ASML NETHERLANDS B.V.
- 申请人地址: NL Veldhoven
- 专利权人: ASML NETHERLANDS B.V.
- 当前专利权人: ASML NETHERLANDS B.V.
- 当前专利权人地址: NL Veldhoven
- 国际申请: PCT/EP2017/061854 WO 20170517
- 主分类号: G03F1/36
- IPC分类号: G03F1/36 ; G03F1/42 ; G03F7/20 ; G03F9/00
摘要:
A method is proposed involving obtaining data regarding an expected focus offset during a patterning process due to topography of a region of a substrate surface. A modification of, e.g., a transmission or reflection of a region of a patterning device associated with the region of the substrate surface is determined based on the data. Using the patterning device modified according the determined modification during the patterning process mitigates an impact of the substrate topography on a parameter of the patterning process.
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