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公开(公告)号：US20230076218A1
公开(公告)日：2023-03-09
申请号：US17799019
申请日：2021-02-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Koenraad VAN INGEN SCHENAU , Abraham SLACHTER , Vadim Yourievich TIMOSHKOV , Marleen KOOIMAN , Marie-Claire VAN LARE , Hermanus Adrianus DILLEN , Stefan HUNSCHE , Luis Alberto Colina Sant COLINA , Aiqin JIANG , Fuming WANG , Sudharshanan RAGHUNATHAN
IPC: G03F7/20
Abstract: Methods related to improving a simulation processes and solutions (e.g., retargeted patterns) associated with manufacturing of a chip. A method includes obtaining a plurality of dose-focus settings, and a reference distribution based on measured values of a characteristic of a printed pattern associated with each setting of the plurality of dose-focus settings. The method further includes, based on an adjustment model and the plurality of dose-focus settings, determining a probability density function (PDF) of the characteristic such that an error between the PDF and the reference distribution is reduced. The PDF can be a function of the adjustment model and variance associated with dose, the adjustment model being configured to change a proportion of non-linear dose sensitivity contribution to the PDF. A process window can be adjusted based on the determined PDF of the characteristic.
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公开(公告)号：US20210241449A1
公开(公告)日：2021-08-05
申请号：US17268863
申请日：2019-08-14
Applicant: ASML NETHERLANDS B.V.
Inventor： Fuming WANG , Stefan HUNSCHE , Wei FANG
Abstract: A method for correcting metrology data of a patterning process. The method includes obtaining (i) metrology data of a substrate subjected to the patterning process and (ii) a quality metric (e.g., a focus index) that quantifies a quality of the metrology data of the substrate; establishing a correlation between the quality metric and the metrology data; and determining a correction to the metrology data based on the correlation between the quality metric and the metrology data.
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公开(公告)号：US20190391498A1
公开(公告)日：2019-12-26
申请号：US16561096
申请日：2019-09-05
Applicant: ASML Netherlands B.V.
Inventor： Scott Anderson MIDDLEBROOKS , Markus Gerardus Martinus Maria VAN KRAAIJ , Adrianus Cornelis Matheus KOOPMAN , Stefan HUNSCHE , Willem Marie Julia Marcel COENE
Abstract: A method and apparatus of detection, registration and quantification of an image. The method may include obtaining an image of a lithographically created structure, and applying a level set method to an object, representing the structure, of the image to create a mathematical representation of the structure. The method may include obtaining a first dataset representative of a reference image object of a structure at a nominal condition of a parameter, and obtaining second dataset representative of a template image object of the structure at a non-nominal condition of the parameter. The method may further include obtaining a deformation field representative of changes between the first dataset and the second dataset. The deformation field may be generated by transforming the second dataset to project the template image object onto the reference image object. A dependence relationship between the deformation field and change in the parameter may be obtained.
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公开(公告)号：US20150227654A1
公开(公告)日：2015-08-13
申请号：US14616905
申请日：2015-02-09
Applicant: ASML NETHERLANDS B.V.
Inventor： Stefan HUNSCHE , Venu VELLANKI
CPC classification number: G06F17/5009 , G03F7/705 , G03F7/70525 , H01L22/20
Abstract: Disclosed herein is a computer-implemented defect prediction method for a device manufacturing process involving processing a pattern onto a substrate, the method comprising: identifying a processing window limiting pattern (PWLP) from the pattern; determining a processing parameter under which the PWLP is processed; and determining or predicting, using the processing parameter, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the PWLP with the device manufacturing process.
Abstract translation: 本发明公开了一种用于在衬底上处理图案的器件制造工艺的计算机实现的缺陷预测方法，所述方法包括：从所述图案中识别处理窗口限制模式（PWLP）; 确定处理所述PWLP的处理参数; 以及使用处理参数来确定或预测由PWLP产生的缺陷与设备制造过程的存在，存在概率，特性或其组合。
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公开(公告)号：US20240126181A1
公开(公告)日：2024-04-18
申请号：US18511454
申请日：2023-11-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Abraham SLACHTER , Stefan HUNSCHE , Wim Tjibbo TEL , Anton Bernhard VAN OOSTEN , Koenraad VAN INGEN SCHENAU , Gijsbert RISPENS , Brennan PETERSON
IPC: G03F7/00
CPC classification number: G03F7/70633 , G03F7/705 , G03F7/70558 , G03F7/70625
Abstract: A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.
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Patent Agency Ranking
公开(公告)号：US20200019069A1
公开(公告)日：2020-01-16
申请号：US16468063
申请日：2017-11-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Tanbir HASAN , Vivek Kumar JAIN , Stefan HUNSCHE , Bruno LA FONTAINE
IPC: G03F7/20
Abstract: A method of topography determination, the method including: obtaining a first focus value derived from a computational lithography model modeling patterning of an unpatterned substrate or derived from measurements of a patterned layer on an unpatterned substrate; obtaining a second focus value derived from measurement of a substrate having a topography; and determining a value of the topography from the first and second focus values.
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公开(公告)号：US20180031981A1
公开(公告)日：2018-02-01
申请号：US15546592
申请日：2016-01-20
Applicant: ASML Netherlands B.V.
Inventor： Venugopal VELLANKI , Vivek Kumar JAIN , Stefan HUNSCHE
CPC classification number: G03F7/7065 , G03F1/60 , G03F1/84 , G03F7/705 , G03F7/70525 , G03F7/70641 , G03F7/70666 , G06F17/5009 , G06F17/5081 , G06F2217/12 , G06N20/00
Abstract: A defect prediction method for a device manufacturing process involving processing one or more patterns onto a substrate, the method including: determining values of one or more processing parameters under which the one or more patterns are processed; and determining or predicting, using the values of the one or more processing parameters, an existence, a probability of existence, a characteristic, and/or a combination selected from the foregoing, of a defect resulting from production of the one or more patterns with the device manufacturing process.
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公开(公告)号：US20240264539A1
公开(公告)日：2024-08-08
申请号：US18565951
申请日：2022-05-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Lingling LU , Yuzhang LIN , Teng WANG , Bo WANG , Raphael Eric LA GRECA , Stefan HUNSCHE
CPC classification number: G03F7/706837 , G03F7/70625 , G03F7/70655 , G06T7/0006 , G06T7/12 , G06T2207/10061 , G06T2207/30148
Abstract: To monitor semiconductor manufacturing process variation, contours of identical pattern features are determined based on SEM images, and the contours are aggregated and statistically analyzed to determine the variation of the feature. Some of the contours are outliers, and the aggregation and averaging of the contours “hides” these outliers. The present disclosure describes filtering certain outlier contours before they are aggregated and statistically analyzed. The filtering can be performed at multiple levels, such as based on individual points on the contours in the set of inspection contours, or based on overall geometrical shapes of the contours in the set of inspection contours.
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公开(公告)号：US20200310242A1
公开(公告)日：2020-10-01
申请号：US16099452
申请日：2017-05-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Johannes Franciscus VAN HAREN , Reiner Maria JUNGBLUT , Leon Paul VAN DIJK , Willem Seine Christian ROELOFS , Wim Tjibbo TEL , Stefan HUNSCHE , Maurits VAN DER SCHAAR
Abstract: A method is proposed involving obtaining data regarding an expected focus offset during a patterning process due to topography of a region of a substrate surface. A modification of, e.g., a transmission or reflection of a region of a patterning device associated with the region of the substrate surface is determined based on the data. Using the patterning device modified according the determined modification during the patterning process mitigates an impact of the substrate topography on a parameter of the patterning process.
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公开(公告)号：US20190025705A1
公开(公告)日：2019-01-24
申请号：US16067303
申请日：2016-12-15
Applicant: ASML NETHERLANDS B.V.
Inventor： Hans VAN DER LAAN , Wim Tjibbo TEL , Marinus JOCHEMSEN , Stefan HUNSCHE
Abstract: Provided is a process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.
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