- 专利标题: APPARATUS AND METHOD FOR HEAT-TREATING SUBSTRATE
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申请号: US16919464申请日: 2020-07-02
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公开(公告)号: US20210020477A1公开(公告)日: 2021-01-21
- 发明人: Hiroyuki MIYASHITA , Shohei YOSHIDA , Takahisa MASE
- 申请人: TOKYO ELECTRON LIMITED
- 申请人地址: JP Tokyo
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP Tokyo
- 优先权: JP2019-131272 20190716
- 主分类号: H01L21/67
- IPC分类号: H01L21/67 ; F27B17/00 ; H01L21/324 ; H01L21/66
摘要:
An apparatus for heat-treating a substrate includes: a stage where the substrate is disposed; a heating part configured to change an output; a first temperature measurement part configured to measure a temperature at which the substrate is heated; a second temperature measurement part configured to measure the temperature, and having a level of measurement accuracy which is lower than that of the first temperature measurement part in a first temperature region and is higher than that of the first temperature measurement part in a second temperature region; a temperature calculator configured to calculate a weighted average temperature of the temperatures measured by the first and second temperature measurement parts if a reference temperature is in a temperature range between the first and second temperatures, and configured to change a weight of the weighted average temperature; and a controller configured to control the output based on the weighted average temperature.
公开/授权文献
- US11488847B2 Apparatus and method for heat-treating substrate 公开/授权日:2022-11-01
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