Invention Application
- Patent Title: CHARGE PUMP FOR USE IN NON-VOLATILE FLASH MEMORY DEVICES
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Application No.: US17075691Application Date: 2020-10-20
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Publication No.: US20210035643A1Publication Date: 2021-02-04
- Inventor: Hieu Van Tran , Anh Ly , Thuan Vu , Kha Nguyen , Hien Pham , Stanley Hong , Stephen T. Trinh
- Applicant: Silicon Storage Technology, Inc.
- Applicant Address: US CA San Jose
- Assignee: Silicon Storage Technology, Inc.
- Current Assignee: Silicon Storage Technology, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: G11C16/14
- IPC: G11C16/14 ; H02M3/07 ; G11C16/30

Abstract:
Numerous embodiments of an improved charge pump design are disclosed for generating the high voltages necessary to perform erase and program operations in non-volatile flash memory devices. In these embodiments, each boost stage in the charge pump is modified to overcome a deficiency in prior art charge pumps whereby voltage actually would decrease in the final boost stage. These modifications include the addition of one or more of a clock doubling circuit, a local self-precharge circuit, a feed-forward precharge circuit, a feed-backward precharge circuit, and a hybrid circuit comprising NMOS and PMOS transistors and diodes.
Public/Granted literature
- US11120881B2 Charge pump for use in non-volatile flash memory devices Public/Granted day:2021-09-14
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